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Increasing body dopant uniformity in multi-gate transistor devices

  • US 8,022,487 B2
  • Filed: 04/29/2008
  • Issued: 09/20/2011
  • Est. Priority Date: 04/29/2008
  • Status: Expired due to Fees
First Claim
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1. An apparatus comprising:

  • a semiconductor substrate;

    a multi-gate fin coupled with the semiconductor substrate, the multi-gate fin comprising a source region, a drain region, and a gate region wherein the gate region is disposed between the source region and the drain region, the gate region being body-doped after higher temperature operations on the apparatus have been performed and a sacrificial gate structure is removed from the multi-gate fin, and before a subsequent gate structure is formed;

    a dielectric material coupled with the source region and the drain region of the multi-gate fin; and

    the subsequent gate structure coupled to the gate region of the multi-gate fin.

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