Solid-state imaging element having image signal overflow path
First Claim
1. A solid state imaging element comprising:
- an amplifying switch having a gate electrically connected to a floating diffusion and a drain electrically connected to a pixel power source;
a transfer switch having a source being said floating diffusion and a drain being a photodiode,wherein an overflow path is between said photodiode and a contact region, said contact region being electrically connected to said pixel power source,wherein said overflow path includes a channel stop, said channel stop having a first conductivity type.
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Abstract
Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse φVn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.
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Citations
9 Claims
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1. A solid state imaging element comprising:
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an amplifying switch having a gate electrically connected to a floating diffusion and a drain electrically connected to a pixel power source; a transfer switch having a source being said floating diffusion and a drain being a photodiode, wherein an overflow path is between said photodiode and a contact region, said contact region being electrically connected to said pixel power source, wherein said overflow path includes a channel stop, said channel stop having a first conductivity type. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A solid state imaging element comprising:
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an amplifying switch having a gate electrically connected to a floating diffusion and a drain electrically connected to a pixel power source; a transfer switch having a source being said floating diffusion and a drain being a photodiode, wherein an overflow path is between said photodiode and a contact region, said contact region being electrically connected to said pixel power source, wherein said amplifying switch is an enhancement type transistor.
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8. A solid state imaging element comprising:
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an amplifying switch having a gate electrically connected to a floating diffusion and a drain electrically connected to a pixel power source; a transfer switch having a source being said floating diffusion and a drain being a photodiode; a reset switch having a source being said floating diffusion and a drain being electrically connected to a vertical selection line, wherein an overflow path is between said photodiode and a contact region, said contact region being electrically connected to said pixel power source, wherein a matrix has a row (n) of pixels and a row (n+1) of pixels, each unit pixel (n, m) in said row (n) of pixels including said transfer switch and said reset switch, wherein each unit pixel (n+1, m) in said row (n+1) includes another transfer switch and another reset switch, said another reset switch having a drain electrically connected to another vertical selection line.
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9. A solid state imaging element comprising:
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an amplifying switch having a gate electrically connected to a floating diffusion and a drain electrically connected to a pixel power source; a transfer switch having a source being said floating diffusion and a drain being a photodiode, wherein an overflow path is between said photodiode and a contact region, said contact region being electrically connected to said pixel power source, wherein said transfer switch is an enhancement type transistor.
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Specification