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Semiconductor memory device, method for fabricating the same and semiconductor switching device

  • US 8,023,309 B2
  • Filed: 09/12/2008
  • Issued: 09/20/2011
  • Est. Priority Date: 10/12/2007
  • Status: Expired due to Fees
First Claim
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1. A semiconductor memory device comprising:

  • a stacked-layer film formed of a ferroelectric layer and a semiconductor layer;

    a first electrode formed on the ferroelectric layer of the stacked-layer film; and

    a plurality of second electrodes formed on the semiconductor layer of the stacked-layer film,wherein each of parts (A) of the semiconductor layer located in regions in which the second electrodes are formed, respectively, holds one of a first state in which majority carriers in the semiconductor layer are coupled with polarization charges in the ferroelectric layer and thereby a low resistance state is achieved and a second state in which minority carriers in the semiconductor layer are coupled with polarization charges in the ferroelectric layer and thereby a high resistance state is achieved, andpart (B) of the semiconductor layer located in a region other than the regions in which the second electrodes are formed, respectively, holds a low resistance state in which majority carriers in the semiconductor layer are coupled with polarization charges in the ferroelectric layer.

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