Method and system for wafer topography-aware integrated circuit design analysis and optimization

• US 8,024,675 B1
• Filed: 08/04/2006
• Issued: 09/20/2011
• Est. Priority Date: 08/04/2006
• Status: Expired due to Fees

• Current Assignee: RPX Corporation
• Original Assignee: Tela Innovations, Inc.
• Inventors: Gupta, Puneet, Sharma, Puneet, Kahng, Andrew, Muddu, Swamy
• Primary Examiner(s): Memula; Suresh
• Application Number:
  US11/499,070
• Time in Patent Office: 1,873 Days
• Field of Search: 716/2, 716/5, 716/11, 716/21, 716/54, 716/55, 716/132
• US Class Current: 716/54
• CPC Class Codes: G06F 2119/18 Manufacturability analysis or optimisation for manufacturability
• CPC Class Codes: G06F 30/39 Circuit design at the physical level physical level design for reconfigurable circuits G06F30/347
• CPC Class Codes: Y02P 90/02 Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]

Abstract

A method and system for designing an optimized specification of an integrated circuit (IC) is provided. The IC comprises a plurality of cells, and each of the cells comprises a plurality of transistors. The method includes preparing a linewidth map of at least one device of the plurality of devices, performing a topography-aware analysis of the at least one device based on the linewidth map, and designing the optimized specification of the IC based on the topography-aware analysis. In another embodiment, a method for estimating a leakage power of at least one device in an IC is provided. The method includes determining a defocus and a pitch value, determining a linewidth value based on the defocus and pitch value, and estimating the leakage current and/or leakage power based on the linewidth value.

Claims

1. A method for designing an optimized specification of an integrated circuit, the integrated circuit comprising a plurality of cells, each of the plurality of cells comprising a plurality of devices, the method comprising:

preparing a linewidth map of at least one device of the plurality of devices based on one or more defocus values indicative of thickness variation of the integrated circuit, a design layout of the integrated circuit, and a topography map of the integrated circuit;

performing a topography-aware analysis of the at least one device based on the linewidth map, one or more characterization models, and the topography map of the integrated circuit; and

designing an optimized specification of the integrated circuit with respect to one or more design objectives, based on the topography-aware analysis and subject to one or more design constraints, wherein each method operation is executed by a processor.

2. The method according to claim 1, wherein the one or more defocus values are derived from the topography map of the integrated circuit.

3. The method according to claim 1, wherein preparing a line width map comprises preparing a defocus lookup table.

4. The method according to claim 3, wherein preparing the defocus lookup table comprises performing a lithography simulation.

5. The method according to claim 4, wherein the lithography simulation comprises simulation of at least one of a photo process, a resist process, and an etch process.

6. The method according to claim 4, wherein the lithography simulation is based on the one or more defocus values and one or more process models, and wherein each of the one or more defocus values correspond to one or more process models.

7. The method according to claim 1, wherein the topography map is based on a process simulation of the design layout of the integrated circuit with respect to one or more process models.

8. The method according to claim 7, wherein the process simulation is a Chemical-Mechanical Polishing (CMP) simulation of dielectric and metal structures in one or more consecutive interconnect layers of the integrated circuit.

9. The method according to claim 7, wherein the process simulation is a Chemical-Mechanical Polishing (CMP) simulation of shallow-trench isolation and one or more transistor-forming layers of the integrated circuit.

10. The method according to claim 7, wherein the process simulation is based on one or more reticle effects.

11. The method according to claim 7, wherein the process simulation is based on one or more wafer-scale bias effects.

12. The method according to claim 1, wherein the one or more characterization models are selected from a group consisting of one or more device models, one or more library cell models, and one or more interconnect models.

13. The method according to claim 12, wherein the one or more device models are based on three-dimensional shape information of the plurality of devices.

14. The method according to claim 12, wherein the one or more library cell models are based on the one or more device models.

15. The method according to claim 12, wherein the one or more interconnect models are based on three-dimensional wiring shape information.

16. The method according to claim 1, wherein performing the topography-aware analysis is with respect to one or more of timing information, timing slack, leakage power, reliability, parametric yield, random defect yield, and total power of the integrated circuit.

17. The method according to claim 1, wherein designing the optimized specification of the integrated circuit is further based on one or more predefined parameters of optimization, wherein the one or more predefined parameters of optimization are selected from a group consisting of transistor gate length sizing, transistor gate width sizing, transistor threshold voltage assignment, and interconnect dimensional sizing.

18. The method according to claim 1, wherein the one or more design constraints are selected from a group consisting of clock period constraints, boundary timing constraints, setup time slack constraints, hold time slack constraints, arrival time skew constraints, leakage power constraints, dynamic power constraints, reliability constraints.

19. The method according to claim 1, further comprising evaluating the optimized specification of the integrated circuit based on one or more design metrics.

20. The method according to claim 19, wherein the one or more design metrics are selected from a group consisting of lithographic process window, total leakage power, maximum clock frequency, functional yield, and parametric yield at a given target clock frequency.

21. The method according to claim 19, wherein the one or more design metrics are considered at a chip level of abstraction of the integrated circuit design.

22. The method according to claim 19, wherein the one or more design metrics are considered at cell level of abstraction of the integrated circuit design.

23. The method according to claim 19, wherein the one or more design metrics are considered at a block level of abstraction of the integrated circuit design.

24. The method according to claim 19, wherein the one or more design metrics are considered at a device level of abstraction of the integrated circuit design.

25. The method according to claim 1, wherein the optimized specification is defined at a circuit level of abstraction of the integrated circuit design.

26. The method according to claim 1, wherein the optimized specification is defined at a layout level of abstraction of the integrated circuit design.

27. The method according to claim 1, wherein the method is embodied in an Electronic Design Automation (EDA) tool that includes one or more computer executable programs for executing the method.

28. The method according to claim 1, wherein the method is embodied in one or more computer programs which are executable on a computer system.

29. The method according to claim 1, wherein the method is utilized to design an integrated circuit.

30. A system for designing an optimized specification of an integrated circuit, the integrated circuit comprising a plurality of cells, each of the plurality of cells comprising a plurality of devices, the system comprising:

a mapping engine for preparing a linewidth map of at least one device of the plurality of devices based on one or more defocus values indicative of thickness variation of the integrated circuit, a topography map, and a design layout of the integrated circuit;

an analysis engine for performing a topography-aware analysis of the at least one device based on the linewidth map, one or more characterization models, the design layout of the integrated circuit, and the topography map of the integrated circuit, and the topography map of the integrated circuit; and

an optimization engine for designing an optimization specification of the integrated circuit with respect to one or more design objectives, based on the topography-aware analysis and one or more design constraints.

31. The system according to claim 30, wherein the mapping engine further comprises a linewidth estimator for determining a linewidth value for the at least one device based on pitch value and a defocus value.

32. The system according to claim 31, wherein the linewidth estimator further comprises:

a pitch calculator for determining the pitch value; and

a defocus estimator for determining the defocus value.

33. The system according to claim 30, wherein the analysis engine further comprises a leakage estimator for determining a leakage power for the at least one device based on the linewidth map.

34. The system according to claim 30 further comprising a process simulator for generating the topography map, wherein the topography map is based on the layout design of the integrated circuit and one or more process models.

35. The system according to claim 30 further comprising a characterization module for generating one or more characterization models.

36. The system according to claim 35, wherein the characterization module further comprises:

a device characterization module for generating one or more device models based on three-dimensional shape information of the plurality of devices;

a library cell characterization module for generating one or more library cell models based on the one or more device models; and

an interconnect characterization module for generating one or more interconnect models based on three-dimensional wiring shape information.

37. The system according to claim 30 further comprising an evaluator for evaluating the optimized specification of the integrated circuit based on one or more design metrics.

38. The system according to claim 37, wherein the one or more design metrics are considered at a chip level of abstraction of the integrated circuit design.

39. The system according to claim 37, wherein the one or more design metrics are considered at a cell level of abstraction of the integrated circuit design.

40. The system according to claim 37, wherein the one or more design metrics are considered at a block level of abstraction of the integrated circuit design.

41. The system according to claim 37, wherein the one or more design metrics are considered at a device level of abstraction of the integrated circuit design.

42. The system according to claim 30, wherein the optimized specification is defined at a circuit level of abstraction of the integrated circuit design.

43. The system according to claim 30, wherein the optimized specification is defined at a layout level of abstraction of the integrated circuit design.

44. The system according to claim 30, wherein the system is embodied in an Electronic Design Automation tool.

45. The system according to claim 30, wherein the system is utilized to design an integrated circuit.