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Thin-film transistor with channel layer formed by metal oxide film including indium, and method of manufacturing the same

  • US 8,026,506 B2
  • Filed: 01/30/2008
  • Issued: 09/27/2011
  • Est. Priority Date: 02/02/2007
  • Status: Expired due to Fees
First Claim
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1. A thin-film transistor comprising respective elements of:

  • three electrodes of a source electrode, a drain electrode and a gate electrode;

    a channel layer; and

    a gate insulating film, wherein the channel layer is formed by indium oxide to which titanium or tungsten is doped.

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