Thin-film transistor with channel layer formed by metal oxide film including indium, and method of manufacturing the same

• US 8,026,506 B2
• Filed: 01/30/2008
• Issued: 09/27/2011
• Est. Priority Date: 02/02/2007
• Status: Expired due to Fees

• Current Assignee: Bridgestone Corporation
• Original Assignee: Bridgestone Corporation
• Inventors: Iwabuchi, Yoshinori, Shiino, Osamu, Funaki, Tatsuya, Sakurai, Ryo
• Primary Examiner(s): Dickey; Thomas L
• Application Number:
  US12/525,448
• Publication Number:
  US 20100025680A1
• Time in Patent Office: 1,336 Days
• Field of Search: 257/13, 257/43, 257/57, 257/E21.387, 257/E29.275, 257/E29.282, 438/149, 438/151, 438/157, 438/283
• US Class Current: 257/13
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

In a thin-film transistor comprising respective elements of: three electrodes of a source electrode, a drain electrode and a gate electrode; a channel layer; and a gate insulating film, at least the channel layer is formed by a metal oxide film including indium. Therefore, it is possible to obtain the thin-film transistor, which can manufacture an element to a polymer substrate without using a high temperature process and which can achieve a high performance and a high reliability at low cost.

Claims

1. A thin-film transistor comprising respective elements of:

three electrodes of a source electrode, a drain electrode and a gate electrode;

a channel layer; and

a gate insulating film, wherein the channel layer is formed by indium oxide to which titanium or tungsten is doped.

2. The thin-film transistor according to claim 1, wherein at least one of the source electrode, the drain electrode and the gate electrode is formed by the same indium oxide as that of the channel layer in which an excellent conductivity is applied by introducing an oxygen defect.

3. The thin-film transistor according to claim 1, wherein the indium oxide is formed by sputtering a target including indium under an atmosphere including oxygen gas.

4. The thin-film transistor according to claim 3, wherein the film of the indium oxide is formed by sputtering under a condition such that a substrate for forming the respective elements is not heated, and, is obtained by effecting no anneal process after the forming the film.

5. A method of manufacturing a thin-film transistor comprising:

forming an indium oxide film, to which titanium or tungsten is doped, and having a predetermined pattern on a substrate by effecting a sputtering process by means of a sintered body of indium oxide, to which titanium or tungsten is doped, as a target, under an atmosphere including oxygen gas, so that the channel layer and at least one electrodes of the source electrode, the drain electrode and the gate electrode are formed by the indium oxide film, to which titanium or tungsten is doped;

wherein two or more indium oxide films, to which titanium or tungsten is doped, having different electric resistivity are formed by varying a flow rate of oxygen gas, so that the channel layer and at least one of the respective electrodes are formed.

6. The method of manufacturing a thin-film transistor according to claim 5, wherein the indium oxide is formed by sputtering under a condition such that a substrate for forming the respective elements is not heated, and, is obtained by effecting no anneal process after the formation.

7. The method of manufacturing a thin-film transistor according to claim 5, wherein an indium oxide layer having an electric resistivity of 10⁻

1-10⁶ Ω

cm is formed as the channel layer, and, an indium oxide layer having an electric resistivity of 10<sup>−

5</sup>-10<sup>−

1</sup> Ω

cm, in which an oxygen defect is introduced by varying a flow rate of oxygen gas, is formed as the electrode.