Semiconductor structures
First Claim
Patent Images
1. A semiconductor structure, comprising:
- a polycrystal substrate;
a first single crystal layer directly formed on the polycrystal substrate; and
a second single crystal layer formed on the first single crystal layer;
wherein a variation of coefficients of thermal expansion (CTE) between the first single crystal layer and the polycrystal substrate is less than 25%;
wherein the polycrystal substrate comprises gallium nitride, gallium oxide, aluminum oxide or silicon carbide.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor structure is disclosed. The semiconductor structure includes a polycrystal substrate, a first single crystal layer formed thereon and a second single crystal layer formed on the first single crystal layer. A variation of coefficients of thermal expansion (CTE) between the first single crystal layer and the polycrystal substrate is less than 25%. There is no lattice mismatch between the first single crystal layer and the polycrystal substrate.
-
Citations
7 Claims
-
1. A semiconductor structure, comprising:
-
a polycrystal substrate; a first single crystal layer directly formed on the polycrystal substrate; and a second single crystal layer formed on the first single crystal layer; wherein a variation of coefficients of thermal expansion (CTE) between the first single crystal layer and the polycrystal substrate is less than 25%; wherein the polycrystal substrate comprises gallium nitride, gallium oxide, aluminum oxide or silicon carbide. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
Specification