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Semiconductor structures

  • US 8,026,517 B2
  • Filed: 05/09/2008
  • Issued: 09/27/2011
  • Est. Priority Date: 05/10/2007
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a polycrystal substrate;

    a first single crystal layer directly formed on the polycrystal substrate; and

    a second single crystal layer formed on the first single crystal layer;

    wherein a variation of coefficients of thermal expansion (CTE) between the first single crystal layer and the polycrystal substrate is less than 25%;

    wherein the polycrystal substrate comprises gallium nitride, gallium oxide, aluminum oxide or silicon carbide.

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