Interconnect structure and method of manufacturing a damascene structure
First Claim
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1. An interconnect structure comprising:
- a layer of dielectric material having at least one opening;
a first barrier layer on sidewalls defining the opening;
a ruthenium- and oxygen-containing second barrier layer overlaying the first barrier layer, the second barrier layer having a ruthenium zone which consists of ruthenium, a ruthenium oxide zone, and a ruthenium-rich zone, the ruthenium zone being interposed between the first barrier layer and the ruthenium oxide zone, and the ruthenium oxide zone being interposed between the ruthenium zone and the ruthenium-rich zone; and
a seed layer over the second barrier layer and a bulk metal filling the entire opening, wherein the seed layer and bulk metal are composed of copper or a copper alloy.
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Abstract
An interconnect structure is provided, including a layer of dielectric material having at least one opening and a first barrier layer on sidewalls defining the opening. A ruthenium-containing second barrier layer overlays the first barrier layer, the second barrier layer having a ruthenium zone, a ruthenium oxide zone, and a ruthenium-rich zone. The ruthenium zone is interposed between the first barrier layer and the ruthenium oxide zone. The ruthenium oxide zone is interposed between the ruthenium zone and the ruthenium-rich zone.
54 Citations
18 Claims
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1. An interconnect structure comprising:
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a layer of dielectric material having at least one opening; a first barrier layer on sidewalls defining the opening; a ruthenium- and oxygen-containing second barrier layer overlaying the first barrier layer, the second barrier layer having a ruthenium zone which consists of ruthenium, a ruthenium oxide zone, and a ruthenium-rich zone, the ruthenium zone being interposed between the first barrier layer and the ruthenium oxide zone, and the ruthenium oxide zone being interposed between the ruthenium zone and the ruthenium-rich zone; and a seed layer over the second barrier layer and a bulk metal filling the entire opening, wherein the seed layer and bulk metal are composed of copper or a copper alloy. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An interconnect structure comprising:
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a layer of dielectric material having at least one opening; a tantalum- and nitrogen-containing first barrier layer on sidewalls defining the opening, the first barrier layer having a tantalum-rich zone and a tantalum nitride zone, wherein the nitrogen content of the tantalum nitride zone is greater than the nitrogen content of the tantalum-rich zone, the tantalum nitride zone being interposed between the dielectric material and the tantalum-rich zone; a ruthenium- and oxygen-containing second barrier layer overlaying the first barrier layer, the second barrier layer having a ruthenium zone which consists of ruthenium, a ruthenium oxide zone, and a ruthenium-rich zone, the ruthenium zone being interposed between the tantalum-rich zone and the ruthenium oxide zone, and the ruthenium oxide zone being interposed between the ruthenium zone and the ruthenium-rich zone; and a seed layer over the second barrier layer and a bulk metal filling the entire opening, wherein the seed layer and bulk metal are composed of copper or a copper alloy. - View Dependent Claims (15, 16, 17, 18)
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Specification