Technique for determining mask patterns and write patterns
First Claim
1. A computer-implemented method for generating a third mask pattern to be used on a photo-mask in a photolithographic process, comprising:
- adding first features to a first mask pattern to produce a second mask pattern, wherein at least some of the first features have an absolute size characteristic larger than a pre-determined value, wherein the first features are topologically disconnected from second features in the first mask pattern that overlap third features in a target pattern, and wherein the first features are added at positions which are determined based on the gradient of a first cost function depending, at least in part, on the first mask pattern and the target pattern; and
generating, using the computer, the third mask pattern based on the second mask pattern, wherein the photo-mask corresponds to the third mask pattern.
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Abstract
During a method for generating a third mask pattern to be used on a photo-mask in a photolithographic process, first features are added to a first mask pattern to produce a second mask pattern. A majority of the first features may have a size characteristic larger than a pre-determined value, and that the first features are topologically disconnected from second features in the first mask pattern that overlap third features in a target pattern. Moreover, the first features may be added at positions which are determined based on the gradient of a first cost function depending, at least in part, on the first mask pattern and the target pattern. Then, the third mask pattern may be generated based on the second mask pattern, where the photo-mask corresponds to the third mask pattern.
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Citations
27 Claims
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1. A computer-implemented method for generating a third mask pattern to be used on a photo-mask in a photolithographic process, comprising:
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adding first features to a first mask pattern to produce a second mask pattern, wherein at least some of the first features have an absolute size characteristic larger than a pre-determined value, wherein the first features are topologically disconnected from second features in the first mask pattern that overlap third features in a target pattern, and wherein the first features are added at positions which are determined based on the gradient of a first cost function depending, at least in part, on the first mask pattern and the target pattern; and generating, using the computer, the third mask pattern based on the second mask pattern, wherein the photo-mask corresponds to the third mask pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification