Apparatus, system and method for high resolution identification with temperature dependent resistive device

• US 8,029,187 B2
• Filed: 02/21/2007
• Issued: 10/04/2011
• Est. Priority Date: 02/21/2007
• Status: Expired due to Fees

• Current Assignee: Kyocera Corporation
• Original Assignee: Kyocera Corporation
• Inventors: Thoma, Jeffrey M., Taylor, John P.
• Primary Examiner(s): VERBITSKY, GAIL KAPLAN
• Application Number:
  US11/677,480
• Publication Number:
  US 20080198898A1
• Time in Patent Office: 1,686 Days
• Field of Search: 374/141, 374170-173, 374/1, 374 4- 5, 374 43- 45, 374/57, 374/100, 374/183, 374/185, 374/163, 374/29, 374/137, 374/166, 374/167, 702/130, 702/99, 702/85, 702/182, 702/188, 324760-765, 324/721, 324/713, 324/429, 324/759, 324/636.1, 320/106, 320/150, 320/128, 320130-132, 320/154, 320114-115, 320/107, 320/134, 320/136
• US Class Current: 374/141
• CPC Class Codes: G01K 7/16 using resistive elements resistive elements per se H01C, H01L
• CPC Class Codes: G01K 7/20 in a specially-adapted circuit, e.g. bridge circuit
• CPC Class Codes: G01K 7/24 in a specially-adapted circuit, e.g. bridge circuit

Abstract

A temperature measuring and identification (TMID) device obtains identification information and temperature information of a connected device having a temperature sensing circuit (TSC). The TSC includes a temperature sensing element (TSE) connected in parallel with a voltage clamping network (VCN) that limits the voltage across the TSE to an identification voltage within an identification voltage range when the voltage is greater than or equal to a lower voltage of the identification voltage range. When a voltage below the lower range is applied to the TSC, the VCN appears as an open circuit and the resistance of the TSC corresponds to temperature. A translation circuit within the TMID shifts TSC voltages within the identification voltage range to a normalization voltage range. Accordingly, voltages corresponding to temperature as well as voltages corresponding to identification are within the normalization voltage range. As a result, the resolution of a voltage sensing device used for measuring the temperature and identification voltages is maximized. In addition, the translation circuit maintains a minimal current during a rest state. For cost or other concerns, a first TSC may omit the VCN to provide a maximum identification voltage and other TSCs may include VCNs with lower identification voltage ranges.

Claims

1. A temperature measuring and identification (TMID) device for determining an identification value and a temperature of an identification device comprising a voltage clamping network in parallel with a temperature sensing element, the voltage clamping network configured to limit a voltage at a detection port to an identification voltage range when the voltage is greater than or equal to a lower voltage of the identification voltage range, the TMID device comprising:

a translation circuit, operatively coupled to the detection port, configured to shift the voltage to a normalized identification voltage within a temperature measuring voltage range during an identification state, the temperature measuring voltage range having an upper temperature measuring voltage less than a clamped voltage resulting from the voltage clamping network limiting the voltage; and

a controller, operatively coupled to the translation circuit, for determining the identification value based on the normalized identification voltage.

2. The TMID device of claim 1, wherein the translation circuit is further configured to present, at the detection port during the identification state, an identification measuring voltage sufficiently high to invoke a clamping function of the voltage clamping network to produce the clamped voltage at the detection port.

3. The TMID device of claim 2, wherein the translation circuit is further configured to present, at the detection port during a temperature measuring state, a temperature measuring voltage sufficiently low to avoid invoking the voltage clamping function.

4. The TMID device of claim 2, wherein the translation circuit is configured to provide:

the normalized identification voltage within a normalized voltage range at a translation circuit output during an identification state, the normalized identification voltage corresponding to the clamped voltage at the detection port; and

a temperature measuring voltage within the normalized voltage range at the translation circuit output, the temperature measuring voltage resulting from a current flowing through the temperature sensing element during a temperature measuring state.

5. The TMID device of claim 4, further comprising:

an analog to digital converter (ADC), operatively coupled to the translation circuit and to the controller, configured to convert an output voltage at the translation circuit output to generate a digital identification voltage during the identification state and to generate a digital temperature measuring voltage during the temperature measuring state, wherein the controller is configured to determine an identification value of the identification device based on the digital identification voltage and to determine the temperature of the identification device based on the digital temperature measuring voltage.

6. The TMID device of claim 5, wherein the detection port is configured to connect to any one of a plurality of identification devices, each identification device comprising a voltage clamping network in parallel with a temperature sensing element.

7. The TMID device of claim 6, wherein when the identification device is connected to the detection port, the translation circuit is further configured to:

present, at the detection port and in response to a first control signal level, an identification measuring voltage sufficiently high to invoke a clamping function of the clamping circuit to produce the clamped voltage at the detection port;

present, at the detection port and in response to a second control signal level, a temperature measuring voltage sufficiently low to avoid invoking the voltage clamping function,

present, at the translation circuit output and in response to the first control signal level, the normalized identification voltage corresponding to the clamped voltage at the detection port and within the normalized voltage range; and

present, at the translation circuit output and in response to the second control signal level, the temperature measuring voltage within the normalized voltage range and corresponding to the temperature of the identification device.

8. The TMID device of claim 7, further comprising:

a first transistor, operatively coupled to a voltage terminal of the TMID device, configured to provide a first current through the identification device in response to the first control signal level and to provide no current in response to the second control signal level;

a second transistor, operatively coupled to the voltage terminal of the TMID device, configured to provide a second current through the identification device in response to a first control signal level; and

a bias storage circuit, operatively coupled to the second transistor, configured to maintain a second transistor bias voltage for a time period after a control signal changes from the first control signal level to the second control signal level to allow the second transistor to provide the second current during the time period.

9. The TMID device of claim 8, further comprising:

two resistors;

a third transistor configured to form a voltage divider with the two resistors in response to the first control signal level, the voltage divider configured to scale the clamped voltage to the normalized voltage, wherein the voltage divider is operatively coupled to the ADC.

10. The TMID device of claim 8, further comprising:

a first resistor connected between a source of the first transistor and the detection port, wherein a gate of the first transistor is configured to receive the control signal; and

a second resistor connected between a source of the second transistor and the detection port, wherein a gate of second transistor is connected to the bias storage circuit.

11. The TMID device of claim 10, wherein the bias storage circuit comprises:

a capacitor connected between a gate of the second transistor and a voltage supply; and

a diode connected between the gate of the second transistor and the gate of the first transistor.

12. The TMID device of claim 8, further comprising a general purpose input/output (GPIO) port, operatively coupled to the controller, configured to generate the control signal in response to the controller.

13. The TMID device of claim 5, where a reference value for the ADC is less than the clamped voltage.

14. The TMID device of claim 13, wherein the reference value is equal to the upper value of the normalized voltage range.

15. The TMID device of claim 4, wherein the clamped voltage is greater than the temperature measuring voltage and greater than a maximum level of the normalized voltage range.