LED units fabrication method
First Claim
1. A method for fabricating a plurality of individual light emitting diode units, comprising:
- providing a sapphire substrate;
forming a GaN epitaxial layer on the sapphire substrate;
forming a plurality of exhaust trenches on the GaN epitaxial layer, wherein the exhaust trenches define a plurality of individual light emitting diode units;
forming a reflective layer on the GaN epitaxial layer;
attaching the reflective layer to a conductive substrate;
removing the sapphire substrate from the GaN epitaxial layer via a laser lift-off process, wherein a gas produced during the laser lift-off process is exhausted via the exhaust trenches; and
dicing the conductive substrate along the exhaust trenches to form the plurality of individual light emitting diode units;
wherein formation of the reflective layer comprises depositing a reflective layer on the GaN epitaxial layer using plasma-enhanced chemical vapor deposition.
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Accused Products
Abstract
A method for fabricating a plurality of individual light emitting diode units includes forming a GaN epitaxial layer on a sapphire substrate, forming a plurality of exhaust trenches on the GaN epitaxial layer, wherein the exhaust trenches define a plurality of individual light emitting diode units, forming a reflective layer on the GaN epitaxial layer, attaching the reflective layer to a conductive substrate, removing the sapphire substrate from the GaN epitaxial layer via a laser lift-off process, wherein a gas produced during the laser lift-off process is exhausted via the exhaust trenches, and dicing the conductive substrate along the exhaust trenches to form the plurality of individual light emitting diode units.
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Citations
13 Claims
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1. A method for fabricating a plurality of individual light emitting diode units, comprising:
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providing a sapphire substrate; forming a GaN epitaxial layer on the sapphire substrate; forming a plurality of exhaust trenches on the GaN epitaxial layer, wherein the exhaust trenches define a plurality of individual light emitting diode units; forming a reflective layer on the GaN epitaxial layer; attaching the reflective layer to a conductive substrate; removing the sapphire substrate from the GaN epitaxial layer via a laser lift-off process, wherein a gas produced during the laser lift-off process is exhausted via the exhaust trenches; and dicing the conductive substrate along the exhaust trenches to form the plurality of individual light emitting diode units; wherein formation of the reflective layer comprises depositing a reflective layer on the GaN epitaxial layer using plasma-enhanced chemical vapor deposition. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for fabricating a plurality of individual light emitting diode units, comprising:
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providing a sapphire substrate; forming a GaN epitaxial layer on the sapphire substrate; forming a plurality of exhaust trenches on the GaN epitaxial layer, wherein the exhaust trenches define a plurality of individual light emitting diode units; forming a reflective layer on the GaN epitaxial layer; attaching the reflective layer to a conductive substrate; removing the sapphire substrate from the GaN epitaxial layer via a laser lift-off process, wherein a gas produced during the laser lift-off process is exhausted via the exhaust trenches; and dicing the conductive substrate along the exhaust trenches to form the plurality of individual light emitting diode units; wherein the exhaust trenches define a preserve region in a middle portion of the GaN epitaxial layer, and a sacrifice region in a marginal portion of the GaN epitaxial layer;
wherein the plurality of individual emitting diode units is formed in the preserve region;wherein the plurality of individual light emitting diode units has the same shape, and is arranged in rows along the exhaust trenches; and wherein a light spot projected on the GaN epitaxial layer by a laser beam has the same shape and size as an individual light emitting diode unit during the laser lift-off process. - View Dependent Claims (11, 12, 13)
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Specification