Method of fabricating nano-hetero structure

• US 8,030,185 B2
• Filed: 04/30/2009
• Issued: 10/04/2011
• Est. Priority Date: 12/31/2008
• Status: Active Grant

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Chen, Chun-Yi, Hsu, Yung-Jung
• Primary Examiner(s): Valentine; Jami M
• Application Number:
  US12/432,757
• Publication Number:
  US 20100163841A1
• Time in Patent Office: 887 Days
• Field of Search: 257/14, 438/478, 977/762
• US Class Current: 438/478
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0669 Nanowires or nanotubes carbon nanotubes as material of solid-state device active part H10K85/211
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 31/0352 characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• CPC Class Codes: Y10S 977/762 Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

Abstract

A nano-hetero structure is provided. The nano-hetero structure includes at least one nano-semiconductor base and a plurality of metal nanoparticles attached on the surface of nano-semiconductor base.

Claims

1. A fabricating method of a nano-hetero structure, comprising:

fabricating at least a nano-semiconductor base; and

adding a metal ion solution into an amine solvent containing the nano-semiconductor base such that a plurality of metal nanoparticles are grown on a surface of nano-semiconductor base to form the nano-hetero structure.

2. The fabricating method of a nano-hetero structure according to claim 1, wherein a method of fabricating the nano-semiconductor base comprises a solvothermal synthetic method.

3. The fabricating method of a nano-hetero structure according to claim 2, wherein the solvothermal method uses the amine solvent as a capping agent.

4. The fabricating method of a nano-hetero structure according to claim 3, wherein the amine solvent comprises ethylenediamine or diethylenetriamine.

5. The fabricating method of a nano-hetero structure according to claim 1, wherein a material of the nano-semiconductor base comprises CdS, CdSe, ZnO, ZnS, ZnSe, ZnO—

RuO₂, CuGaS₂, TiO₂, GaP, GaAs, or a combination thereof.

6. The fabricating method of a nano-hetero structure according to claim 1, wherein the metal ion solution comprises ion of Fe, Co, Ni, Cu, Ga, Mo, Ru, Rh, Pd, Ag, In, Sb, Ir, Pt, Au,or Pb, or a combination thereof.