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Contact barrier structure and manufacturing methods

  • US 8,030,210 B2
  • Filed: 03/11/2010
  • Issued: 10/04/2011
  • Est. Priority Date: 05/25/2007
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor structure, the method comprising:

  • forming a silicon-containing component;

    forming a metal layer on the silicon-containing component;

    reacting the metal layer with the silicon-containing component to form a silicide region, wherein a top portion of the metal layer is not consumed by the step of reacting;

    selectively removing a first portion of the top portion of the metal layer, wherein a second portion of the top portion of the metal layer remains after the selective removal;

    forming a contact over and electrically connected to the second portion of the top portion of the metal layer; and

    forming a contact barrier layer at least encircling the contact.

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