Methods for forming bit line contacts and bit lines during the formation of a semiconductor device
First Claim
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1. A method comprising:
- forming a plurality of conductive bit line plugs at a first cross-sectional location and at a second cross-sectional location;
forming a first blanket conductive bit line layer which contacts the plurality of conductive bit line plugs at the first and second cross-sectional locations; and
removing a portion of the first blanket conductive bit line layer to form a plurality of first bit lines which contact the bit line plugs at the first location, but which is removed from contact with the bit line plugs at the second location.
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Abstract
A method for forming a semiconductor device comprises forming first and second bit lines at different levels. Forming the bit lines at different levels increases processing latitude, particularly the spacing between the bit lines which, with conventional processes, may strain photolithographic limits. A semiconductor device formed using the method, and an electronic system comprising the semiconductor device, are also described.
18 Citations
21 Claims
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1. A method comprising:
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forming a plurality of conductive bit line plugs at a first cross-sectional location and at a second cross-sectional location; forming a first blanket conductive bit line layer which contacts the plurality of conductive bit line plugs at the first and second cross-sectional locations; and removing a portion of the first blanket conductive bit line layer to form a plurality of first bit lines which contact the bit line plugs at the first location, but which is removed from contact with the bit line plugs at the second location. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method comprising:
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forming a plurality of conductive bit line plugs at a first cross-sectional location and at a second cross-sectional location; forming a first blanket conductive bit line layer which contacts the plurality of conductive bit line plugs at the first and second cross-sectional locations; and removing a portion of the first blanket conductive bit line layer to form a plurality of first bit lines which contact the bit line plugs at the first location, but which is removed from contact with the bit line plugs at the second location; forming a dielectric layer over the plurality of first bit lines and bit line plugs at the first cross-sectional location, and over the first bit lines and bit line plugs at the second cross-sectional location; forming a patterned mask over the bit line plugs at the first cross-sectional location and over the first bit lines at both the first and second cross-sectional locations, wherein the bit line plugs at the second location are uncovered by the patterned mask; etching the dielectric layer using the patterned mask as a pattern to form a plurality of openings in the dielectric layer which expose the bit line plugs at the second location; forming a second conductive bit line layer over both the dielectric layer and over the first bit line layer at the first and second cross-sectional locations, and within the plurality of openings in the dielectric layer to contact the bit line plugs at the second cross-sectional location, wherein the second conductive bit line layer does not contact the bit line plugs at the first cross-sectional location; and etching the second conductive hit line layer at the first and second cross-sectional locations to form a plurality of second bit lines, wherein at least a portion of the second conductive bit line layer remains within the plurality of openings at the second cross-sectional location and over the dielectric layer at the first cross-sectional location subsequent to the etching of the second conductive bit line layer. - View Dependent Claims (8, 9)
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10. A method comprising:
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providing a plurality of conductive plugs within a first dielectric layer at a first cross-sectional location and at a second cross-sectional location, wherein each conductive plug electrically contacts one of a plurality of conductive regions of a semiconductor structure; forming a first blanket conductive layer to electrically contact the conductive plugs at the first cross-sectional location; forming a blanket second dielectric layer over the blanket conductive layer; etching the blanket second dielectric layer and the blanket conductive layer to form a plurality of first conductive lines from the first blanket conductive layer, wherein a conductive line contacts each of the conductive plugs at the first cross-sectional location; forming a second blanket conductive layer which contacts the conductive plugs at the second cross-sectional location; and removing the second blanket conductive layer from over at least a portion of at least one of the first conductive lines at the first cross-sectional location and to leave the second conductive layer contacting the conductive plugs at the second cross-sectional location. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification