Simplified pitch doubling process flow
First Claim
Patent Images
1. A method, comprising:
- providing a plurality of photoresist mandrels over a substrate;
providing a blanket layer of spacer material on the plurality of mandrels;
providing a layer of photoresist material on the blanket layer of spacer material;
patterning the layer of photoresist material;
subsequently simultaneously patterning spacer material under the patterned layer of photoresist material and forming spacers on sidewalls of the mandrels by etching the blanket layer of spacer material, wherein the photoresist material is disposed over ends of the spacers during subsequently simultaneously patterning spacer material;
simultaneously selectively removing the mandrels and the patterned layer of photoresist material to leave a plurality of spacers over the substrate; and
transferring a pattern defined by the spacers and the patterned spacer to an underlying substrate.
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Abstract
A method for fabricating a semiconductor device comprises patterning a layer of photoresist material to form a plurality of mandrels. The method further comprises depositing an oxide material over the plurality of mandrels by an atomic layer deposition (ALD) process. The method further comprises anisotropically etching the oxide material from exposed horizontal surfaces. The method further comprises selectively etching photoresist material.
205 Citations
25 Claims
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1. A method, comprising:
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providing a plurality of photoresist mandrels over a substrate; providing a blanket layer of spacer material on the plurality of mandrels; providing a layer of photoresist material on the blanket layer of spacer material; patterning the layer of photoresist material; subsequently simultaneously patterning spacer material under the patterned layer of photoresist material and forming spacers on sidewalls of the mandrels by etching the blanket layer of spacer material, wherein the photoresist material is disposed over ends of the spacers during subsequently simultaneously patterning spacer material; simultaneously selectively removing the mandrels and the patterned layer of photoresist material to leave a plurality of spacers over the substrate; and transferring a pattern defined by the spacers and the patterned spacer to an underlying substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method, comprising:
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providing a plurality of mandrels over a substrate; providing a blanket layer of spacer material over the mandrels; providing a masking layer on the blanket layer, the masking layer having a pattern and extending over the spacer material at ends of the mandrels; etching the blanket layer to define spacers at sidewalls of the mandrels and to transfer the pattern from the masking layer to underlying portions of the blanket layer wherein the masking layer extends over the spacer material at the ends of the mandrels during etching the blanket layer; removing the mandrels and the patterned masking layer to form a mask pattern defined by spacers and patterned portions of the blanket layer; and transferring the mask pattern to underlying material. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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19. A method, comprising:
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providing mandrels over the substrate, the mandrels disposed in an array region and outside of a periphery region of the substrate; providing a spacer layer on the mandrels and extending over the array and the periphery regions; depositing a layer of photoresist on the spacer layer; patterning the layer of photoresist to form a photoresist pattern, wherein photoresist extends over the spacer layer at ends of the mandrels; and subsequently forming spacers at sidewalls of the mandrels and transferring the photoresist pattern into the spacer layer to form a patterned spaced layer, wherein the photoresist pattern extends over the spacer layer at the ends of the mandrels during subsequently forming spacers. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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Specification