Semiconductor device and manufacturing method thereof
First Claim
1. A semiconductor device comprising:
- a first conductive layer;
an insulating layer over the first conductive layer;
a second conductive layer and a third conductive layer over the insulating layer;
a first buffer layer over the second conductive layer;
a second buffer layer over the third conductive layer; and
a semiconductor layer over the first buffer layer and the second buffer layer,wherein a part of the semiconductor layer is over and in contact with the insulating layer,wherein the semiconductor layer includes indium, gallium, zinc, and oxygen, andwherein each of the first buffer layer and the second buffer layer includes a metal oxide having n-type conductivity.
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Accused Products
Abstract
A semiconductor device including thin film transistors having high electrical properties and reliability is proposed. Further, a method for manufacturing the semiconductor devices with mass productivity is proposed. The semiconductor device includes a thin film transistor which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, a source electrode layer and a drain electrode layer over the gate insulating layer, a buffer layer over the source electrode layer and the drain electrode layer, and a semiconductor layer over the buffer layer. A part of the semiconductor layer overlapping with the gate electrode layer is over and in contact with the gate insulating layer and is provided between the source electrode layer and the drain electrode layer. The semiconductor layer is an oxide semiconductor layer containing indium, gallium, and zinc. The buffer layer contains a metal oxide having n-type conductivity. The semiconductor layer and the source and drain electrode layers are electrically connected to each other through the buffer layer.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a first conductive layer; an insulating layer over the first conductive layer; a second conductive layer and a third conductive layer over the insulating layer; a first buffer layer over the second conductive layer; a second buffer layer over the third conductive layer; and a semiconductor layer over the first buffer layer and the second buffer layer, wherein a part of the semiconductor layer is over and in contact with the insulating layer, wherein the semiconductor layer includes indium, gallium, zinc, and oxygen, and wherein each of the first buffer layer and the second buffer layer includes a metal oxide having n-type conductivity. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a first conductive layer; an insulating layer over the first conductive layer; a second conductive layer and a third conductive layer over the insulating layer; a first buffer layer over the second conductive layer; a second buffer layer over the third conductive layer; a third buffer layer over the first buffer layer; a fourth buffer layer over the second buffer layer; and a semiconductor layer over the third buffer layer and the fourth buffer layer, wherein a part of the semiconductor layer is over and in contact with the insulating layer, wherein the semiconductor layer includes indium, gallium, zinc, and oxygen, wherein each of the first to fourth buffer layers includes a metal oxide having n-type conductivity, and wherein each of the third buffer layer and the fourth buffer layer has a carrier concentration higher than the carrier concentration of the semiconductor layer and lower than the carrier concentration of each of the first buffer layer and the second buffer layer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method for manufacturing a semiconductor device comprising:
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forming a first conductive layer over a substrate; forming an insulating layer over the first conductive layer; forming a second conductive layer and a third conductive layer over the insulating layer; forming a first buffer layer over the second conductive layer and second buffer layer over the third conductive layer; and forming a semiconductor layer over the first buffer layer and the second buffer layer, wherein the semiconductor layer includes indium, gallium, zinc, and oxygen, wherein each of the first buffer layer and the second buffer layer includes a metal oxide having n-type conductivity, and wherein each of the first buffer layer and the second buffer layer has a higher carrier concentration than the semiconductor layer. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification