Light emitting device

• US 8,030,664 B2
• Filed: 12/12/2007
• Issued: 10/04/2011
• Est. Priority Date: 12/15/2006
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung LED Co., Ltd. (Samsung Electronics Co. Ltd.)
• Inventors: Choi, Chang Hwan, Moon, Won Ha, Kim, Hyun Jun, Kim, Dong Woohn
• Primary Examiner(s): Vu; David
• Assistant Examiner(s): TAYLOR, EARL N
• Application Number:
  US12/000,360
• Publication Number:
  US 20080142782A1
• Time in Patent Office: 1,392 Days
• Field of Search: 257/13, 257/14, 257/22, 257/79, 257/E29.076, 257/E29.168, 257/E29.248, 257/E31.033, 257/E33.008, 257/E49.003, 977/762
• US Class Current: 257/79
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/0037 having a MIS barrier layer
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: Y10S 977/762 Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

Abstract

There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

Claims

1. A light emitting device comprising:

a substrate; and

a nanowire array formed on the substrate and having a plurality of nanowire structures,

wherein each of the nanowire structures comprises a stack having

a semiconductor layer;

an active layer formed on the semiconductor layer, the active layer comprising a quantum well structure;

an insulating layer formed on the active layer; and

a metal layer formed on the insulating layer.

2. The light emitting device of claim 1, wherein the semiconductor layer is formed of one of a GaN-based semiconductor, a ZnO-based semiconductor, a GaAs-based semiconductor, a GaP-based semiconductor, and a GaAsP-based semiconductor.

3. The light emitting device of claim 1, wherein the active layer comprises at least one layer.

4. The light emitting device of claim 1, wherein the quantum well structure is one of a single quantum well structure and a multiple quantum well structure.

5. The light emitting device of claim 1, wherein at least one of the semiconductor layer and the active layer comprises a group III-V compound semiconductor or a group II-VI compound semiconductor.