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Nitride semiconductor device comprising bonded substrate and fabrication method of the same

  • US 8,030,665 B2
  • Filed: 04/30/2008
  • Issued: 10/04/2011
  • Est. Priority Date: 07/08/2002
  • Status: Expired due to Fees
First Claim
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1. A nitride semiconductor device, comprising:

  • a substrate having two opposed main faces;

    a bonding layer placed on one main face of said substrate;

    a p-electrode on said bonding layer;

    one or more p-type nitride semiconductor layers electronically connected to the p-electrode;

    an active layer comprising at least a well layer of AlaInbGa1-a-bN, (0≦

    a≦

    1, 0≦

    b≦

    1, a+b≦

    1), and a barrier layer of AlcIndGa1-c-dN, (0≦

    c≦

    1, 0≦

    d≦

    1, c+d≦

    1), the active layer being on said p-type nitride semiconductor layers;

    n-type nitride semiconductor layers on said active layer; and

    an n-electrode electrically connected to one or more of said n-type nitride semiconductor layers;

    wherein said p-type nitride semiconductor layers, said active layer and said n-type nitride semiconductor layers are sandwiched between said p-electrode and said n-electrode, andwherein protrusions or recessions are formed on a surface of said n-type semiconductor layers, said surface being on a side where luminescence is extracted from.

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