Nitride semiconductor device comprising bonded substrate and fabrication method of the same
First Claim
1. A nitride semiconductor device, comprising:
- a substrate having two opposed main faces;
a bonding layer placed on one main face of said substrate;
a p-electrode on said bonding layer;
one or more p-type nitride semiconductor layers electronically connected to the p-electrode;
an active layer comprising at least a well layer of AlaInbGa1-a-bN, (0≦
a≦
1, 0≦
b≦
1, a+b≦
1), and a barrier layer of AlcIndGa1-c-dN, (0≦
c≦
1, 0≦
d≦
1, c+d≦
1), the active layer being on said p-type nitride semiconductor layers;
n-type nitride semiconductor layers on said active layer; and
an n-electrode electrically connected to one or more of said n-type nitride semiconductor layers;
wherein said p-type nitride semiconductor layers, said active layer and said n-type nitride semiconductor layers are sandwiched between said p-electrode and said n-electrode, andwherein protrusions or recessions are formed on a surface of said n-type semiconductor layers, said surface being on a side where luminescence is extracted from.
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Abstract
A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.
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Citations
16 Claims
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1. A nitride semiconductor device, comprising:
-
a substrate having two opposed main faces; a bonding layer placed on one main face of said substrate; a p-electrode on said bonding layer; one or more p-type nitride semiconductor layers electronically connected to the p-electrode; an active layer comprising at least a well layer of AlaInbGa1-a-bN, (0≦
a≦
1, 0≦
b≦
1, a+b≦
1), and a barrier layer of AlcIndGa1-c-dN, (0≦
c≦
1, 0≦
d≦
1, c+d≦
1), the active layer being on said p-type nitride semiconductor layers;n-type nitride semiconductor layers on said active layer; and an n-electrode electrically connected to one or more of said n-type nitride semiconductor layers; wherein said p-type nitride semiconductor layers, said active layer and said n-type nitride semiconductor layers are sandwiched between said p-electrode and said n-electrode, and wherein protrusions or recessions are formed on a surface of said n-type semiconductor layers, said surface being on a side where luminescence is extracted from. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A nitride semiconductor device, comprising:
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a substrate having two opposed main faces; a bonding layer placed on one main face of said substrate; a p-electrode on said bonding layer; one or more p-type nitride semiconductor layers electrically connected to the p-electrode; a p-side insulating protection film made of a monolayer or a multi-layer film and formed between said bonding layer and said p-type nitride semiconductor layers; an active layer comprising at least a well layer of AlaInbGa1-a-bN, (0≦
a≦
1, 0≦
b≦
1, a+b<
1), and a barrier layer of AlcIndGa1-c-dN, (0≦
c≦
1, 0≦
d≦
1, c+d≦
1), the active layer being on said p-type nitride semiconductor layers;n-type nitride semiconductor layers on said active layer; and an n-electrode electrically connected to one or more of said n-type nitride semiconductor layers; wherein said p-type nitride semiconductor layers, said active layer and said n-type nitride semiconductor layers are sandwiched between said p-electrode and said n-electrode, wherein protrusions or recessions are formed on a surface of said n-type semiconductor layers, said surface being on a side where luminescence is extracted from. - View Dependent Claims (13, 14, 15, 16)
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Specification