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Field-effect transistor and method for manufacturing a field-effect transistor

  • US 8,030,703 B2
  • Filed: 12/26/2007
  • Issued: 10/04/2011
  • Est. Priority Date: 12/29/2006
  • Status: Expired due to Fees
First Claim
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1. A semiconductor component, comprising:

  • a substrate having a surface;

    a trench formed in the surface and having a trench bottom and a trench edge;

    a source area implemented at the trench edge;

    a gate electrode at least partially implemented in the trench and separated from the substrate by an insulation layer;

    a gate contact contacting the gate electrode;

    a drain electrode at a side of the substrate;

    an additional electrode implemented between the gate electrode and the trench bottom and electrically insulated from the substrate; and

    an electrical connection with a predetermined ohmic resistance value coupled between the additional electrode and the gate electrode,wherein the predetermined ohmic resistance value is selected so that an equalization of potential between the gate electrode and the additional electrode takes place after a time delay, andwherein the gate contact and the electrical connection are provided on opposite sides of the trench.

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