ID chip and IC card

• US 8,030,745 B2
• Filed: 02/28/2005
• Issued: 10/04/2011
• Est. Priority Date: 03/04/2004
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Louie; Wai Sing
• Assistant Examiner(s): Jahan; Bilkis
• Application Number:
  US10/590,271
• Publication Number:
  US 20070176622A1
• Time in Patent Office: 2,409 Days
• Field of Search: 343/700.MS, 235/380, 235/492, 257/53, 257/64, 257/83, 257/84, 257/679, 257/E23.064, 257/E23.176, 257/923
• US Class Current: 257/679
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
• CPC Class Codes: G06K 19/0728 the arrangement being an optical or sound-based communication interface
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/145 at least one of the further markings being adapted for galvanic or wireless sensing, e.g. an RFID tag with both a wireless and an optical interface or memory, or a contact type smart card with ISO 7816 contacts and an optical interface or memory
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 31/147 the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
• CPC Class Codes: Y10S 257/923 with means to optimize electrical conductor current carrying capacity, e.g. particular conductor aspect ratio

Abstract

The present invention provides an ID chip or an IC card in which the mechanical strength of an integrated circuit can be enhanced without suppressing a circuit scale. An ID chip or an IC card of the present invention has an integrated circuit in which a TFT (a thin film transistor) is formed from an insulated thin semiconductor film. Further, an ID chip or an IC card of the present invention has a light-emitting element and a light-receiving element each using a non-single-crystal thin film for a layer conducting photoelectric conversion. Such a light-emitting element or a light-receiving element may be formed consecutively to (integrally with) an integrated circuit or may be formed separately and attached to an integrated circuit.

Claims

1. A semiconductor device comprising:

an antenna;

an integrated circuit comprising a thin film transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the light-receiving element has a layer for conducting photoelectric conversion using a non-single crystal thin film,

wherein the light-emitting element has an electroluminescent layer using a non-single crystal thin film,

wherein the integrated circuit includes a power supply circuit configured to generate a power supply voltage from an alternating voltage generated by the antenna, and

wherein the antenna, the light-emitting element and the light-receiving element are electrically connected to the integrated circuit on the same substrate.

2. A semiconductor device comprising:

an antenna;

an integrated circuit comprising a thin film transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the antenna, the light-emitting element and the light-receiving element are electrically connected to the integrated circuit,

wherein the integrated circuit includes a power supply circuit configured to generate a power supply voltage from an alternating voltage generated by the antenna, and

wherein the integrated circuit, the light-emitting element and the light-receiving element are formed on the same substrate.

3. A semiconductor device comprising:

an antenna;

an integrated circuit comprising a thin film transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the antenna, the light-emitting element and the light-receiving element are electrically connected to the integrated circuit,

wherein the integrated circuit includes a power supply circuit configured to generate a power supply voltage from an alternating voltage generated by the antenna, and

wherein the antenna, the integrated circuit, the light-emitting element and the light-receiving element are formed on the same substrate.

4. A semiconductor device comprising:

an integrated circuit;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the integrated circuit comprises a connection terminal, a rectification circuit configured to rectify an alternating voltage generated by an antenna, a power supply circuit configured to generate a power supply voltage by using a voltage outputted from the rectification circuit, a demodulation circuit, and a logic circuit, and

wherein the integrated circuit, the light-emitting element and the light-receiving element are formed on the same substrate.

5. A semiconductor device comprising:

an antenna;

an integrated circuit comprising a thin film transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the light-receiving element has a layer for conducting photoelectric conversion using a non-single crystal thin film,

wherein the light-emitting element has an electroluminescent layer using a non-single crystal thin film,

wherein the antenna, the light-emitting element and the light-receiving element are electrically connected to the integrated circuit,

wherein the integrated circuit, the light-emitting element and the light-receiving element are attached to a substrate with an adhesive agent, and

wherein the integrated circuit includes a power supply circuit configured to generate a power supply voltage from an alternating voltage generated by the antenna.

9. The semiconductor device according to any one of claims 5 to 8, wherein the substrate is a plastic substrate.

6. A semiconductor device comprising:

an antenna;

an integrated circuit comprising a thin film transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the antenna, the light-emitting element and the light-receiving element are electrically connected to the integrated circuit,

wherein the integrated circuit, the light-emitting element and the light-receiving element are attached to a substrate with an adhesive agent, and

wherein the integrated circuit includes a power supply circuit configured to generate a power supply voltage from an alternating voltage generated by the antenna.

7. A semiconductor device comprising:

an antenna;

an integrated circuit comprising a thin film transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the antenna, the light-emitting element and the light-receiving element are electrically connected to the integrated circuit,

wherein the antenna, the integrated circuit, the light-emitting element and the light-receiving element are attached to a substrate with an adhesive agent, and

wherein the integrated circuit includes a power supply circuit configured to generate a power supply voltage from an alternating voltage generated by the antenna.

8. A semiconductor device comprising:

an integrated circuit;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the integrated circuit comprises a connection terminal, a rectification circuit configured to rectify an alternating voltage generated by an antenna, a power supply circuit configured to generate a power supply voltage by using a voltage outputted from the rectification circuit, a demodulation circuit, and a logic circuit,

wherein the integrated circuit, the light-emitting element and the light-receiving element are formed integrally, and

wherein the integrated circuit, the light-emitting element and the light-receiving element are attached to a substrate with an adhesive agent.

10. An IC card comprising:

an antenna;

an integrated circuit comprising a thin film transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the antenna, the light-emitting element and the light-receiving element are electrically connected to the integrated circuit,

wherein the integrated circuit includes a power supply circuit configured to generate a power supply voltage from an alternating voltage generated by the antenna, and

wherein the integrated circuit, the light-emitting element and the light-receiving element are formed on the same substrate.

11. The IC card according to claim 10, wherein the antenna, the integrated circuit, the light-emitting element and the light-receiving element are formed on the same substrate.

12. An IC card comprising:

an integrated circuit;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the integrated circuit comprises a connection terminal, a rectification circuit configured to rectify an alternating voltage generated by an antenna, a power supply circuit configured to generate a power supply voltage by using a voltage outputted from the rectification circuit, a demodulation circuit, and a logic circuit, and

wherein the integrated circuit, the light-emitting element and the light-receiving element are formed on the same substrate.

15. The IC card according to claim 12, wherein the integrated circuit, the light-emitting element and the light-receiving element are attached to a substrate with an adhesive agent.

16. The IC card according to any one of claims 12-13, wherein the substrate is a plastic substrate.

13. An IC card comprising:

an antenna;

an integrated circuit comprising a thin film transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the antenna, the light-emitting element and the light-receiving element are electrically connected to the integrated circuit,

wherein the integrated circuit, the light-emitting element and the light-receiving element are attached to a substrate with an adhesive agent,

wherein the integrated circuit includes a power supply circuit configured to generate a power supply voltage from an alternating voltage generated by the antenna.

14. The IC card according to claim 13, wherein the antenna and the integrated circuit in addition to the light-emitting element and the light-receiving element are attached to the substrate with an adhesive agent.