Technique for flagging oversaturated pixels

• US 8,031,260 B2
• Filed: 01/27/2005
• Issued: 10/04/2011
• Est. Priority Date: 02/16/1999
• Status: Active Grant

• Current Assignee: Aptina Imaging Corporation (ON Semiconductor Corporation)
• Original Assignee: Aptina Imaging Corporation (ON Semiconductor Corporation)
• Inventors: Fossum, Eric R., Barna, Sandor L.
• Primary Examiner(s): Tran; Nhan T
• Assistant Examiner(s): Le; Tuan H
• Application Number:
  US11/043,247
• Publication Number:
  US 20050128329A1
• Time in Patent Office: 2,441 Days
• Field of Search: 348246-247, 348294-324, 348/229.1, 348/362, 348/364
• US Class Current: 348/362
• CPC Class Codes: H04N 25/627 Detection or reduction of inverted contrast or eclipsing effects
• CPC Class Codes: H04N 25/75 Circuitry for providing, modifying or processing image signals from the pixel array

Abstract

An active pixel sensor (APS) that includes circuitry to eliminate artifacts in digital images. The APS includes a comparator for comparing a signal level from a pixel to an adjusted saturation voltage to determine if the pixel is saturated. If the pixel is saturated, an associated saturation flag is stored and used to replace the signal from the pixel with a maximum value corresponding to a brightest pixel in the image.

Claims

1. An active pixel sensor comprising:

at least one pixel comprising a photodetector that outputs an output level indicative of incoming light;

a sample and hold element electrically connected to the at least one pixel operating to store a signal output level of the at least one pixel during a readout operation;

an adjusted saturated voltage source, comprising a node which provides an adjusted saturation voltage; and

a comparator having a first input node operatively connected to the sample and hold element, a second input node electrically connected to the adjusted saturation voltage node, and an output node, said comparator operating to output a signal indicating whether the adjusted saturation voltage exceeds the output level from the photodetector,

wherein said signal output from said comparator triggers replacement of a pixel value derived from said signal output level of the at least one pixel with a maximum pixel value when the adjusted saturation voltage exceeds the output level from the photodetector.

2. The active pixel sensor of claim 1 further comprising a latch including an input node and an output node, said input node operatively connected to the output node of the comparator operating to store a saturation flag in response to the adjusted saturation voltage exceeding the output level from the photodiode.

3. The active pixel sensor of claim 2 further comprising a select transistor operatively connected to the output node of the latch and operating to enable readout of the saturation flag during a readout operation for the pixel.

4. The active pixel sensor of claim 1 wherein the photodetector is a photodiode.

5. A method for flagging an oversaturated pixel in an active pixel sensor array, the method comprising:

reading a signal voltage from a pixel;

comparing the signal voltage to an adjusted saturation voltage;

storing a saturation flag in response to the signal voltage exceeding the adjusted saturation voltage;

reading a reset voltage, from the pixel;

calculating a digitized value for said pixel from the reset voltage and the signal voltage;

determining whether the pixel has an associated saturation flag; and

replacing said digitized value with a maximum digital value for a pixel in response to the pixel having an associated saturation flag, wherein said maximum digital value corresponds to the digital value of a brightest pixel in an image.

6. The method of claim 5, wherein the adjusted saturation voltage is a voltage corresponding to a maximum digital value for a pixel and wherein said maximum digital value corresponds to the digital value of a brightest pixel in an image.

7. An active pixel sensor comprising:

at least one pixel comprising a photodetector;

a sample and hold element electrically connectable to said at least one pixel for storing an output signal of the at least one pixel;

an adjusted saturated voltage source for providing an adjusted saturation voltage; and

a comparator having a first input node coupled to the sample and hold element and a second input coupled to the adjusted saturation voltage source, for indicating whether a saturation voltage exceeds an output level of said pixel input, wherein a signal output from said comparator indicates if a digital value derived from said output signal of the at least one pixel is to be replaced with a maximum digital value.

8. The active pixel sensor of claim 7 further comprising a latch including an input node and an output node, said input node coupled to the output node of the comparator for storing a saturation flag if the adjusted saturation voltage exceeds the output level from the photodiode.

9. The active pixel sensor of claim 8 further comprising a select transistor coupled to the output node of the latch and for enabling readout of the saturation flag during a readout operation for the pixel.

10. The active pixel sensor of claim 7 wherein the photodetector is a photodiode.

11. An active pixel sensor comprising:

at least one pixel comprising a photodetector, said at least one pixel producing an output signal in response to a light received by said photodetector;

a sample and hold element coupled to said at least one pixel and for storing a signal level from the pixel during a signal readout operation;

an adjusted saturated voltage source, for providing an adjusted saturation voltage; and

a comparator having a first input node coupled to the sample and hold element, a second input node coupled to the adjusted saturation voltage node and an output node;

a latch electrically connected to the comparator output node for storing a saturation flag if the adjusted saturation voltage exceeds the signal level;

a select transistor coupled to the output node of the latch for reading the saturation flag during a readout operation for the pixel;

a differencing element coupled to the pixel for producing a difference level from the signal level and a reset level output from the pixel during the pixel readout operation;

an analog-to-digital converter for converting the difference level into a difference digital value; and

a digital output selector comprising;

a detector coupled to the latch output node,

an input node coupled to the analog-to-digital converter and an output node, and

a switch for switching the difference value on the output node to a maximum digital value in response to the detector detecting a saturation flag, wherein said maximum digital value corresponds to the digital value of a brightest pixel in an image.

12. The active pixel sensor of claim 11, further comprising a plurality of pixels arranged in rows and columns.

13. The active pixel sensor of claim 12, wherein each column includes an analog-to-digital converter for converting the difference level into the difference digital value.

14. The active pixel sensor of claim 13, wherein the comparator is part of the analog-to-digital converter.

15. A CMOS imager, comprising:

a pixel array comprising a plurality of pixels arranged in columns and rows;

a plurality of sample-and-hold circuits respectively connected to each of said columns, the sample-and-hold circuits operating to store a pixel signal output level during a readout operation;

an adjusted saturated voltage source, comprising a node which provides an adjusted saturation voltage;

a plurality of comparators each having a first input node operatively connected to a respective one of the plurality of sample and hold circuits, a second input node electrically connected to the adjusted saturation voltage node, and an output node, the comparators operating to output a signal indicating whether the adjusted saturation voltage exceeds the pixel signal output level stored by the connected sample-and-hold circuit; and

an output selector configured to select, for each of said plurality of sample-and-hold circuits, one of a differential pixel value derived from the pixel signal output level stored on said sample-and-hold circuit and a maximum pixel value in response to the signal output by the respective one of the comparators.

16. The CMOS imager of claim 15 further comprising a plurality of latches each having an input node and an output node, said input node operatively connected to the output node of a respective one of the plurality of comparators, the plurality of latches operating to store a saturation flag in response to the adjusted saturation voltage exceeding the pixel signal output level stored by the sample-and-hold circuit connected to the comparator.

17. The CMOS imager of claim 16 further comprising a plurality of select transistors each operatively connected to the output node of a respective one of the plurality of latches and operating to enable readout of the saturation flag stored in the latch during the readout operation.

18. A method for flagging oversaturated pixels in a CMOS imager, the method comprising:

reading a signal voltage from each of a plurality of pixels;

comparing each of the signal voltages to an adjusted saturation voltage;

storing a saturation flag for each pixel that has a signal voltage exceeding the adjusted saturation voltage;

reading a reset voltage from each of the plurality of pixels;

calculating a digitized value for each of the plurality of pixels based on the reset voltage;

and signal voltage of each pixel; and

replacing the digitized value with a maximum digital value for a pixel for each pixel that has an associated saturation flag, wherein said maximum digital value corresponds to the digital value of a brightest pixel in an image.