VCSEL optimized for high speed data
First Claim
1. A Vertical Cavity Surface Emitting Laser optimized for reduced parasitic lateral current under an oxide of the Vertical Cavity Surface Emitting Laser, wherein non-radiative recombination occurs at an oxide semiconductor boundary according to a non-radiative lifetime, the Vertical Cavity Surface Emitting Laser comprising:
- an active region including one or more quantum wells, wherein the active region comprises a high Al confinement region, the high Al being about >
80% or more;
an oxide layer comprising an aperture disposed near the active region, wherein vertically the center of the oxide layer is about ¾
wave optical thickness from the center of the quantum wells;
an intermediate region between the active region and the oxide layer, the intermediate region comprising a direct bandgap material with radiative lifetimes that are less than non-radiative lifetimes, anda spacer region, the spacer region comprising an extra mirror period, wherein the extra mirror period comprises low Al and is configured to trap minority carriers to allow them to recombine radiatively in the intermediate region.
5 Assignments
0 Petitions
Accused Products
Abstract
A Vertical Cavity Surface Emitting Laser (VCSEL) is optimized for longer life of the VCSEL by controlling the distance of doped and undoped layers near an active region. In addition, the VCSEL optimized for reduced parasitic lateral current under an oxide of the VCSEL by forming a high Al confinement region and placing the oxide at a null in a standing optical wave. Further, the VCSEL is optimized to reduce resistance.
-
Citations
8 Claims
-
1. A Vertical Cavity Surface Emitting Laser optimized for reduced parasitic lateral current under an oxide of the Vertical Cavity Surface Emitting Laser, wherein non-radiative recombination occurs at an oxide semiconductor boundary according to a non-radiative lifetime, the Vertical Cavity Surface Emitting Laser comprising:
-
an active region including one or more quantum wells, wherein the active region comprises a high Al confinement region, the high Al being about >
80% or more;an oxide layer comprising an aperture disposed near the active region, wherein vertically the center of the oxide layer is about ¾
wave optical thickness from the center of the quantum wells;an intermediate region between the active region and the oxide layer, the intermediate region comprising a direct bandgap material with radiative lifetimes that are less than non-radiative lifetimes, and a spacer region, the spacer region comprising an extra mirror period, wherein the extra mirror period comprises low Al and is configured to trap minority carriers to allow them to recombine radiatively in the intermediate region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
Specification