Exposure apparatus and method for producing device

• US 8,034,539 B2
• Filed: 02/23/2007
• Issued: 10/11/2011
• Est. Priority Date: 12/10/2002
• Status: Expired due to Fees

• Current Assignee: Nikon Corporation
• Original Assignee: Nikon Corporation
• Inventors: Arai, Dai, Magome, Nobutaka, Takaiwa, Hiroaki
• Primary Examiner(s): YOUNG, CHRISTOPHER G
• Application Number:
  US11/709,856
• Publication Number:
  US 20070171391A1
• Time in Patent Office: 1,691 Days
• Field of Search: 430/302, 430/311, 430/945, 430/330, 355/27, 355/30, 355/53, 355/72, 355/77
• US Class Current: 430/302
• CPC Class Codes: G03F 7/70341 Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply chemical composition of immersion liquids G03F7/2041
• CPC Class Codes: G03F 7/7075 Handling workpieces outside exposure position, e.g. SMIF box
• CPC Class Codes: G03F 7/70991 Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
• CPC Class Codes: Y10S 430/146 Laser beam

Abstract

An exposure system includes an exposure section for irradiating a formed resist film with exposing light through a mask with an immersion liquid provided on the resist film, and a drying section for drying a surface of the resist film after irradiation.

Claims

1. A pattern formation method comprising the steps of:

forming a resist film on a substrate;

performing pattern exposure by selectively irradiating the resist film with exposing light via a projection optical system and an immersion liquid in a first chamber, a space between the projection optical system and the resist film is locally filled with the immersion liquid;

transferring the substrate into a second chamber which has a cover member, the substrate being surrounded by the cover member;

removing the immersion liquid remaining on a surface of the resist film in the second chamber after the pattern exposure; and

forming a resist pattern by developing the resist film after removing the immersion liquid.

2. The pattern formation method of claim 1, wherein the step of removing the immersion liquid is a step of blowing air against the resist film after the pattern exposure, a step of dehumidifying an atmosphere around the resist film after the pattern exposure, or a step of warming the resist film after the pattern exposure.

3. The pattern formation method of claim 1, wherein the immersion liquid is water, cedar oil or a fluorine-based oil.

4. The pattern formation method of claim , wherein the exposing light is KrF excimer laser, ArF excimer laser or F₂ laser.

5. A pattern formation method comprising the steps of:

forming a resist film on a substrate;

performing pattern exposure by selectively irradiating the resist film with exposing light via a projection optical system and an immersion liquid in a first chamber, a space between the projection optical system and the resist film is locally filled with the immersion liquid;

transferring the substrate into a second chamber which has a cover member, the substrate being surrounded by the cover member;

blowing air against the resist film in the second chamber after the pattern exposure; and

forming a resist pattern by developing the resist film after blowing the air against the resist film.

6. The pattern formation method of claim 5, wherein the air is warm air.

7. The pattern formation method of claim 5, wherein the immersion liquid is water, cedar oil or a fluorine-based oil.

8. The pattern formation method of claim 5, wherein the exposing light is KrF excimer laser, ArF excimer laser or F₂ laser.