Method of fabricating high aspect ratio metal structures
First Claim
1. A method of fabricating metal structures, comprising:
- providing a two-layer structure of selected thickness on at least one;
conductive layer, said two-layer structure comprises a first layer adjacent said at least one conductive layer and a second layer adjacent said first layer;
etching, using a Deep Reactive Ion Etching (DRIE) process, completely through at least one selected etchable region of said second layer with said at least one selected etchable region being at least partially aligned with a region of said at least one conductive layer;
removing said first layer for exposing said region of said at least one conductive layer,wherein remaining portions of said two-layer structure and said region of said at least one conductive layer so-exposed define a mold, said mold comprises a base region;
electroplating a metal onto said base region; and
removing said remaining portions of said two-layer structure for forming a metal structure,wherein said at least one conductive layer comprises a plurality of conductive layers deposited in a pattern on a support substrate,wherein said first layer is comprised of silicon dioxide and said second layer is comprised of silicon,wherein said etching said at least one selected etchable region forms a trench in said silicon of said second layer, andwherein said electroplating includes filling said trench with said metal.
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Accused Products
Abstract
To fabricate high aspect ratio metal structures, a two-layer structure is provided on a conductive layer. The two-layer structure includes a first layer adjacent the conductive layer and a second layer adjacent the first layer where the second layer is etchable by a Deep Reactive Ion Etching (DRIE) process. Using the DRIE process, at least one selected region of the second layer is completely etched away with the selected region being at least partially aligned with a region of the conductive layer such that the first layer is then exposed thereover. The first layer so-exposed is then removed to expose the region of the conductive layer thereunder. Metal is electroplated onto the exposed conductive layer and any remaining portions of the two-layer structure are then removed.
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Citations
20 Claims
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1. A method of fabricating metal structures, comprising:
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providing a two-layer structure of selected thickness on at least one;
conductive layer, said two-layer structure comprises a first layer adjacent said at least one conductive layer and a second layer adjacent said first layer;etching, using a Deep Reactive Ion Etching (DRIE) process, completely through at least one selected etchable region of said second layer with said at least one selected etchable region being at least partially aligned with a region of said at least one conductive layer; removing said first layer for exposing said region of said at least one conductive layer, wherein remaining portions of said two-layer structure and said region of said at least one conductive layer so-exposed define a mold, said mold comprises a base region; electroplating a metal onto said base region; and removing said remaining portions of said two-layer structure for forming a metal structure, wherein said at least one conductive layer comprises a plurality of conductive layers deposited in a pattern on a support substrate, wherein said first layer is comprised of silicon dioxide and said second layer is comprised of silicon, wherein said etching said at least one selected etchable region forms a trench in said silicon of said second layer, and wherein said electroplating includes filling said trench with said metal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of fabricating metal structures, comprising:
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providing a two-layer structure of selected thickness on a conductive layer, said two-layer structure comprises a first layer adjacent said conductive layer and a second layer adjacent said first layer; etching, using a Deep Reactive Ion Etching (DRIE) process, completely through at least one selected etchable region of said second layer with said at least one selected etchable region being aligned with a region of said conductive layer, wherein said first layer is exposed over said region of said conductive layer;
removing said first layer for exposing said region of said conductive layer,wherein remaining portions of said two-layer structure and said region of conductive layer so-exposed define a mold, said mold comprises a base region; electroplating a metal onto said base region; and removing said remaining portions of said two-layer structure for forming a metal structure, wherein said two-layer structure includes a first thickness, wherein said metal is electroplated so said metal structure comprises a second thickness at least as thick as the first thickness, wherein said first layer is comprised of silicon dioxide and said second layer is comprised of silicon, wherein said etching said at least one selected etchable region forms a trench in said silicon of said second layer, and wherein said electroplating includes filling said trench with said metal. - View Dependent Claims (17, 18, 19, 20)
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Specification