Transistor, semiconductor device including a transistor and methods of manufacturing the same
First Claim
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1. A transistor, comprising:
- a first channel layer;
a first threshold voltage adjusting layer directly contacting the first channel layer;
a first source electrode and a first drain electrode contacting opposing ends of the first channel layer;
a first gate electrode separated from the first channel layer; and
a first gate insulating layer between the first channel layer and the first gate electrode,wherein the first channel layer is between the first threshold voltage adjusting layer and the first gate insulating layer, andthe first threshold voltage adjusting layer is separated from at least one of the first source electrode and the first drain electrode.
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Abstract
A transistor, a semiconductor device including the transistor and methods of manufacturing the same are provided, the transistor including a threshold voltage adjusting layer contacting a channel layer. A source electrode and a drain electrode contacting may be formed opposing ends of the channel layer. A gate electrode separated from the channel layer may be formed. A gate insulating layer may be formed between the channel layer and the gate electrode.
5 Citations
23 Claims
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1. A transistor, comprising:
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a first channel layer; a first threshold voltage adjusting layer directly contacting the first channel layer; a first source electrode and a first drain electrode contacting opposing ends of the first channel layer; a first gate electrode separated from the first channel layer; and a first gate insulating layer between the first channel layer and the first gate electrode, wherein the first channel layer is between the first threshold voltage adjusting layer and the first gate insulating layer, and the first threshold voltage adjusting layer is separated from at least one of the first source electrode and the first drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A transistor, comprising:
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a first channel layer; a first threshold voltage adjusting layer contacting the first channel layer; an insulating layer on the first threshold voltage adjusting layer, the insulating layer having a hole that exposes a portion of the first threshold voltage adjusting layer, wherein the first channel layer contacts the exposed portion of the first threshold voltage adjusting layer; a first source electrode and a first drain electrode contacting opposing ends of the first channel layer; a first gate electrode separated from the first channel layer, the first gate electrode being above the first channel layer; and a first gate insulating layer between the first channel layer and the first gate electrode, wherein the first channel layer is between the first threshold voltage adjusting layer and the first gate insulating layer.
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Specification