Optical devices featuring textured semiconductor layers

• US 8,035,113 B2
• Filed: 10/31/2006
• Issued: 10/11/2011
• Est. Priority Date: 04/15/2004
• Status: Active Grant

• Current Assignee: Trustees of Boston University
• Original Assignee: Trustees of Boston University
• Inventors: Cabalu, Jasper S., Moustakas, Theodore D.
• Primary Examiner(s): Vu; David
• Assistant Examiner(s): FOX, BRANDON C
• Application Number:
  US11/590,687
• Publication Number:
  US 20070120141A1
• Time in Patent Office: 1,806 Days
• Field of Search: 257/79, 257/103, 257/99, 257/E33.012, 257/98, 257/82
• US Class Current: 257/79
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 29/155 Comprising only semiconductor materials H01L29/154 takes precedence
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 31/0236 Special surface textures
• CPC Class Codes: H01L 31/02363 of the semiconductor body itself, e.g. textured active layers
• CPC Class Codes: H01L 31/035236 Superlattices; Multiple quantum well structures
• CPC Class Codes: H01L 31/035281 Shape of the body
• CPC Class Codes: H01L 31/03529 Shape of the potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/184 the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
• CPC Class Codes: H01L 31/1852 comprising a growth substrate not being an AIIIBV compound
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials

Abstract

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Claims

1. A semiconductor device for use as an emitter, the device comprising:

a substrate having a smooth surface and comprising a material selected from the group consisting of sapphire, silicon carbide, zinc oxide, silicon, gallium arsenide, gallium nitride, aluminum nitride and aluminum gallium nitride;

a first layer grown on said substrate, said first layer having upper and lower surfaces, the lower surface grown onto and contacting the smooth surface of said substrate,

the first layer comprising a III-nitride semiconductor, wherein the upper surface of the first layer is textured as grown, the texture resulting from the growth process, and

the first layer being n-type doped;

a first contact electrically connected to the first layer;

one or more quantum well layers on respective barrier layers deposited directly on said first layer and textured by the upper surface of the first layer,

the barrier layers comprising a III-nitride semiconductor and the quantum well layers comprising a III-nitride semiconductor; and

an upper layer on said quantum well layers comprising a III-nitride semiconductor separated from the quantum well layers by a further barrier layer, wherein the upper layer and further barrier layer are surface textured by the surface of the adjacent quantum well layer;

the upper layer being p-type doped and having a second contact electrically connected thereto;

wherein an electroluminescence spectrum of emissions from the device is controlled in wavelength by passing a varying current through the device between said first and second contacts.

2. The semiconductor device of claim 1, wherein the substrate comprises a material selected from the group consisting of (0001) sapphire, (10-12) sapphire, (10-10) sapphire, (11-20) sapphire, (0001) silicon carbide, (0001) zinc oxide, (111) silicon, (111) gallium arsenide, (0001) gallium nitride and (0001) aluminum nitride and (0001) AlGaN.

3. The semiconductor device of claim 1, wherein the substrate comprises a textured surface on a side away from said first layer.

4. The semiconductor device of claim 1, wherein the substrate comprises a polished surface on a side facing said first layer.

5. The semiconductor device of claim 1, wherein the first layer is a deposition on the substrate resulting from one of hydride vapor phase epitaxy, metal-organic chemical vapor deposition, molecular beam epitaxy, liquid phase epitaxy, laser ablation or a combination of such methods.

6. The semiconductor device of claim 5, wherein the first layer is a result of hydride vapor phase epitaxy of the III-nitride semiconductor material thereon in the presence of excess HCl.

7. The semiconductor device of claim 6, wherein the molar ratio of NH₃ to HCl in the hydride vapor phase epitaxy process is from 5:

1 to 10;

1.

8. The semiconductor device of claim 6, wherein the quantum well layers and barrier layers are the result of molecular beam epitaxy.

9. The semiconductor device of claim 5, wherein the first layer is a result of molecular beam epitaxy in the presence of a molar excess of N over Ga.

10. The semiconductor device of claim 1, wherein one or more quantum well layers are grown by one of hydride vapor phase epitaxy, metal-organic chemical vapor deposition, molecular beam epitaxy, liquid phase epitaxy, laser ablation or a combination of these methods.

11. The semiconductor device of claim 1, wherein the electroluminescence spectrum of the device comprises two or more peaks.

12. The semiconductor device of claim 11, having regions of different thickness interspersed within each quantum well layer.

13. The semiconductor device of claim 11, wherein one of said peaks is in the range of 390-450 nm and the other peak is in the range of 500-600 nm.

14. The semiconductor device of claim 11, wherein increasing the current through the device between said first and second contacts increases the electroluminescence at one of said peaks relative to the other.

15. The semiconductor device of claim 14, wherein the peak that increases is in the range of 390-450 nm.

16. The semiconductor device of claim 14, wherein the color temperature of the electroluminescence is blue-shifted by increasing the current through the device between said first and second contacts.

17. The semiconductor device of claim 1 whose electroluminescence is white.

18. The semiconductor device of claim 1 whose electroluminescence is characterized by a color temperature in the range of 2500°

K-7500°

K.

19. The semiconductor device of claim 1 further comprising a phosphor.

20. The semiconductor device of claim 19, wherein the phosphor has an emission peak in the range of 500-700 nm.

21. A variable color indicator, comprising:

the semiconductor device of claim 1; and

a controller for setting the current through the device between said first and second contacts in response to an input signal, wherein a change in the input signal results in a change in the color of light emitted by the device.

22. A variable color illumination device comprising:

one or more semiconductor devices of claim 1; and

a controller for setting the current through each of the devices between said first and second contacts in response to one or more input signals, wherein a change in the input signals results in a change in the intensity and color of the light emitted by the semiconductor device.

23. The illumination device of claim 22, wherein a plurality of said semiconductor devices are arranged in an array.

24. The illumination device of claim 22 comprising a plurality of said semiconductor devices, wherein each semiconductor device is independently controlled.

25. The illumination device of claim 22 comprising a plurality of said semiconductor devices, wherein the semiconductor devices are controlled in unison.

26. A two-dimensional color display, comprising:

a two-dimensional array comprising a plurality of the semiconductor devices of claim 1; and

a controller for setting the current through each semiconductor device between said first and second contacts in response to an input signal, wherein the input signal results in the formation of a color pattern of light emitted by the semiconductor devices.

27. The color display of claim 26, wherein the color pattern forms an image viewable by looking at the array.

28. The display of claim 27 which forms a still image.

29. The display of claim 27 which forms a moving image.

30. A projector, comprising:

a two-dimensional array comprising a plurality of the semiconductor devices of claim 1; and

a controller for setting the current through each semiconductor device between said first and second contacts in response to an input signal, wherein the input signal results in the formation of a color pattern of light emitted by the semiconductor devices and projected onto a viewing screen.

31. The projector of claim 30, wherein the color pattern forms an image on the viewing screen.

32. The projector of claim 30 which is a still-image projector.

33. The projector of claim 30 which is a motion picture projector.

34. The device of claim 1, wherein the one or more layers having quantum wells are arrayed in a plane having undulations corresponding to the surface texturing of said first layer.

35. The device of claim 1, wherein the texture of the upper surface of the first layer is characterized by an approximately Gaussian distribution of surface depth.

36. The device of claim 35, wherein the average surface depth is in the range of 200 nm to 1.5 μ

m.