Molecular electronic device having a patterned electrode and method of fabricating the same

• US 8,035,137 B2
• Filed: 12/22/2008
• Issued: 10/11/2011
• Est. Priority Date: 06/30/2008
• Status: Expired due to Fees

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Park, Dae-Sik
• Primary Examiner(s): Dickey; Thomas L
• Application Number:
  US12/341,812
• Publication Number:
  US 20090101955A1
• Time in Patent Office: 1,023 Days
• Field of Search: 204/403.04, 204/403.11, 257/253
• US Class Current: 257/253
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11C 13/0009 RRAM elements whose operation depends upon chemical change
• CPC Class Codes: G11C 13/0014 comprising cells based on organic memory material
• CPC Class Codes: G11C 13/0033 Disturbance prevention or evaluation; Refreshing of disturbed memory data
• CPC Class Codes: G11C 2213/79 Array wherein the access device being a transistor
• CPC Class Codes: H01G 11/02 using combined reduction-oxidation reactions, e.g. redox arrangement or solion
• CPC Class Codes: H01G 11/26 characterised by their structure, e.g. multi-layered, porosity or surface features
• CPC Class Codes: H01G 11/30 characterised by their material
• CPC Class Codes: H01G 11/56 Solid electrolytes, e.g. gels; Additives therein
• CPC Class Codes: H01G 11/84 Processes for the manufacture of hybrid or EDL capacitors, or components thereof
• CPC Class Codes: H01G 4/33 Thin- or thick-film capacitors thin- or thick-film circuits H01L27/00; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor H01L28/40
• CPC Class Codes: H01G 9/22 Devices using combined reduction and oxidation, e.g. redox arrangement or solion
• CPC Class Codes: H01L 28/91 made by depositing layers, e.g. by depositing alternating conductive and insulating layers
• CPC Class Codes: H10B 12/033 the capacitor extending over the transistor
• CPC Class Codes: H10K 10/701 Organic molecular electronic devices
• CPC Class Codes: Y02E 60/13 Energy storage using capacitors

Abstract

A molecular electronic device, and a method of fabricating the same, includes a first electrode having a plurality of prominences and depressions on which a plurality of molecules are self-assembled. Capacitance of a molecular electronic device used as a capacitor is increased by forming prominences and depressions on the surface of the first electrode thereby enabling more molecules to be self-assembled on the surface of the lower electrode.

Claims

1. A molecular electronic device, comprising:

a first electrode having a surface that includes prominences and depressions;

a plurality of molecules self-assembled on the surface of the first electrode; and

a thin film of an oxide-based material formed over the first electrode;

wherein the plurality of molecules are self-assembled on the thin film.

2. The molecular electronic device of claim 1, wherein the prominences are formed in an island shape surrounded by the depressions, or the prominences and the depressions are formed in a line shape alternating each other.

3. The molecular electronic device of claim 1, further comprising:

a second electrode over the first electrode; and

an electrolyte layer interposed between the first electrode and the second electrode,

wherein each of the plurality of molecules includes a tether connected on the surface of the first electrode and a redox active unit for reacting with the electrolyte layer to be oxidized or deoxidized.

4. The molecular electronic device of claim 3, wherein the first electrode is made of gold or silver, and the tether includes thiol.

5. The molecular electronic device of claim 3, wherein the redox active unit is made of porphyrin-based molecules or ferrocene-based molecules.

6. The molecular electronic device of claim 3, wherein electric charges are stored or discharged by oxidization or deoxidization of the redox active unit according to a voltage applied between the first electrode and the second electrode.

7. The molecular electronic device of claim 6, wherein data is stored by storing or discharging the electric charges.

8. The molecular electronic device of claim 1, further comprising:

a second electrode on the first electrode; and

an electrolyte layer interposed between the first electrode and the second electrode,

wherein each of the plurality of molecules includes a tether connected to a surface of the thin film, and a redox active unit for reacting with the electrolyte layer to be oxidized or deoxidized.

9. The molecular electronic device of claim 8, wherein the tether include silane.

10. A memory device, comprising:

a transistor having source and drain regions; and

a capacitor connected to the source or drain regions of the transistor;

wherein the capacitor includes;

a first electrode having prominences and depressions on a surface of the first electrode;

a plurality of molecules self-assembled over the surface;

an electrolyte layer over the first electrode;

a second electrode over the electrolyte layer, and

an oxide thin film formed over the first electrode;

wherein each of the plurality of molecules includes a tether connected to the surface of the first electrode, and a redox active unit for reacting with the electrolyte layer to be oxidized or deoxidized.

11. The memory device of claim 10, wherein data is stored by storing or discharging electric charges through oxidization and deoxidization of the redox active unit according to a voltage applied between the first electrode and the second electrode.

12. The memory device of claim 10, wherein the prominences are formed in an island shape surrounded by the depressions, or the prominences and the depressions are formed in a line shape alternating each other.

13. A method of fabricating a molecular electronic device, comprising:

forming a first electrode on a substrate;

forming prominences and depressions on a surface of the first electrode; and

forming a plurality of molecules on the surface of the first electrode using a self-assembling method, further comprising;

forming a thin film of an oxide-based material over the first electrode after forming the prominences and the depressions on the surface of the first electrode,

wherein the plurality of molecules are formed on a surface of the thin film by the self-assembling method.

14. The method of claim 13, wherein forming the prominences and the depressions on the surface of the first electrode is performed by a patterning process.

15. The method of claim 13, further comprising:

forming an electrolyte layer over the first electrode after forming the plurality of molecules on the surface of the first electrode using the self-assembling method; and

forming a second electrode over the electrolyte layer.

16. The method of claim 13, wherein forming the prominences and the depressions on the surface of the first electrode forms the prominences in an island shape surrounded by the depressions or forms the prominences and the depressions in a line shape alternating each other.