Device structure and manufacturing method using HDP deposited source-body implant block
First Claim
1. A semiconductor power device comprising a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near said top surface above a drain region disposed on a bottom surface of a said substrate, wherein said semiconductor power device further comprising:
- an implanting-ion block disposed above said top surface on a mesa area above said body region and in a middle portion between two of said trenched gates having a thickness for blocking body implanting ions from entering into said substrate under said mesa area whereby masks for manufacturing said semiconductor power device can be reduced;
said body region constituting a merged body region merged from two separated body regions between two of said trenched gates having an inverted V pinnacle point near a bottom center of said body region between two of said trenched gates; and
a bottom portion of said trenched gate is filled with a trench bottom block formed simultaneously with said implanting ion block by filling trenches of said trenched gates with a layer of said implanting ion block wherein said trench bottom block filled in said bottom portion of said trenched gate having a thickness from a bottom of said trenched gate substantially equal to an etch-down thickness in etching and removing said layer of said implanting ion-block from a top portion of said trenched gate and from peripheral areas surrounding a top surface of said trenched gate while leaving said implanting-ion block as an intact portion of said layer of said implanting ion block.
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Abstract
This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.
23 Citations
13 Claims
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1. A semiconductor power device comprising a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near said top surface above a drain region disposed on a bottom surface of a said substrate, wherein said semiconductor power device further comprising:
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an implanting-ion block disposed above said top surface on a mesa area above said body region and in a middle portion between two of said trenched gates having a thickness for blocking body implanting ions from entering into said substrate under said mesa area whereby masks for manufacturing said semiconductor power device can be reduced; said body region constituting a merged body region merged from two separated body regions between two of said trenched gates having an inverted V pinnacle point near a bottom center of said body region between two of said trenched gates; and a bottom portion of said trenched gate is filled with a trench bottom block formed simultaneously with said implanting ion block by filling trenches of said trenched gates with a layer of said implanting ion block wherein said trench bottom block filled in said bottom portion of said trenched gate having a thickness from a bottom of said trenched gate substantially equal to an etch-down thickness in etching and removing said layer of said implanting ion-block from a top portion of said trenched gate and from peripheral areas surrounding a top surface of said trenched gate while leaving said implanting-ion block as an intact portion of said layer of said implanting ion block. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification