System and method for ESD protection
First Claim
1. An integrated circuit electrostatic discharge (ESD) protection circuit, comprising:
- a shunting grounded-gate n-type metal-oxide-semiconductor (ggNMOS) ESD structure; and
a gate-boosting structure disposed in an n-well coupled between the ggNMOS ESD structure and a protected component, the gate-boosting structure comprising;
a configuration diode coupled to the protected component;
a first transistor coupled to the configuration diode and the ggNMOS ESD structure, anda second transistor coupled to the first transistor and the configuration diode, the configuration diode, the first transistor, and the second transistor being disposed in the n-well.
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Accused Products
Abstract
An integrated receiver with channel selection and image rejection substantially implemented on a single CMOS integrated circuit is described. A receiver front end provides programmable attenuation and a programmable gain low noise amplifier. Frequency conversion circuitry advantageously uses LC filters integrated onto the substrate in conjunction with image reject mixers to provide sufficient image frequency rejection. Filter tuning and inductor Q compensation over temperature are performed on chip. The filters utilize multi track spiral inductors. The filters are tuned using local oscillators to tune a substitute filter, and frequency scaling during filter component values to those of the filter being tuned. In conjunction with filtering, frequency planning provides additional image rejection. The advantageous choice of local oscillator signal generation methods on chip is by PLL out of band local oscillation and by direct synthesis for in band local oscillator. The VCOs in the PLLs are centered using a control circuit to center the tuning capacitance range. A differential crystal oscillator is advantageously used as a frequency reference. Differential signal transmission is advantageously used throughout the receiver. ESD protection is provided by a pad ring and ESD clamping structure that maintains signal integrity. Also provided are shunts at each pin to discharge ESD build up. The shunts utilize a gate boosting structure to provide sufficient small signal RF performance, and minimal parasitic loading.
44 Citations
24 Claims
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1. An integrated circuit electrostatic discharge (ESD) protection circuit, comprising:
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a shunting grounded-gate n-type metal-oxide-semiconductor (ggNMOS) ESD structure; and a gate-boosting structure disposed in an n-well coupled between the ggNMOS ESD structure and a protected component, the gate-boosting structure comprising; a configuration diode coupled to the protected component; a first transistor coupled to the configuration diode and the ggNMOS ESD structure, and a second transistor coupled to the first transistor and the configuration diode, the configuration diode, the first transistor, and the second transistor being disposed in the n-well. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An integrated circuit electrostatic discharge (ESD) protection circuit, comprising:
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a shunting grounded-gate n-type metal-oxide-semiconductor (ggNMOS) transistor having a source coupled to ground, a drain coupled to a protected component, and a gate coupled to a node; a resistor coupled between ground and the node; a second transistor having a gate coupled to the node, and a source, drain, and backgate coupled to an n-well; a third transistor having a drain and backgate coupled to the n-well, and a source coupled to a power supply; and a diode having a cathode coupled to the n-well and an anode coupled to the protected component. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. An integrated circuit electrostatic discharge (ESD) protection circuit, comprising:
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a shunting grounded-gate n-type metal-oxide-semiconductor (ggNMOS) transistor having a source coupled to ground, a drain coupled to a protected component, and a gate coupled to a node; a resistor coupled between ground and the node; a capacitor having a first electrode coupled to the node, and a second electrode coupled to an n-well; and a diode having a cathode coupled to the n-well and an anode coupled to the protected component. - View Dependent Claims (19, 20, 21, 22, 23, 24)
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Specification