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Scattering bar OPC application method for sub-half wavelength lithography patterning

  • US 8,039,180 B2
  • Filed: 02/22/2011
  • Issued: 10/18/2011
  • Est. Priority Date: 06/30/2003
  • Status: Expired due to Fees
First Claim
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1. A method of forming a mask comprising features to be imaged and optical proximity correction features, said method comprising the steps of:

  • forming a first assist feature adjacent a feature to be imaged;

    forming a second assist feature non-parallel to the first assist feature and also adjacent to the feature to be imaged;

    extending one or both of the first and second assist features until they intersect; and

    forming a corner assist feature at the intersection of the first assist and second assist features and pulling back both the first and second assist features until they both contact the corner assist feature but extend no further.

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