Method for manufacturing a printed circuit board with a thin film capacitor embedded therein having a dielectric film by using laser lift-off, and printed circuit board with a thin film capacitor embedded therein manufactured thereby

• US 8,039,759 B2
• Filed: 06/08/2007
• Issued: 10/18/2011
• Est. Priority Date: 07/19/2006
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Chung, Yul Kyo, Lee, In Hyung, Lee, Jung Won
• Primary Examiner(s): Chen; Xiaoliang
• Application Number:
  US11/808,298
• Publication Number:
  US 20080030969A1
• Time in Patent Office: 1,593 Days
• Field of Search: 174/260, 174/261, 361/280, 298/52, 438/197, 438/240, 438/627, 438/96, 438/166, 438/455, 438/458, 257/275, 257/306, 257/310, 257/532, 257/778
• US Class Current: 174/260
• CPC Class Codes: H01G 13/00 Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
• CPC Class Codes: H01G 4/33 Thin- or thick-film capacitors thin- or thick-film circuits H01L27/00; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor H01L28/40
• CPC Class Codes: H01L 21/4857 Multilayer substrates multilayer metallisation on monolayer substrate H01L21/4846
• CPC Class Codes: H01L 23/50 for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 1/162 incorporating printed capacitors
• CPC Class Codes: H05K 2201/0108 Transparent
• CPC Class Codes: H05K 2201/0175 Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
• CPC Class Codes: H05K 2201/0179 Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
• CPC Class Codes: H05K 2203/016 Temporary inorganic, non-metallic carrier, e.g. for processing or transferring
• CPC Class Codes: H05K 2203/107 Using laser light
• CPC Class Codes: Y10T 29/43 Electric condenser making
• CPC Class Codes: Y10T 29/49155 Manufacturing circuit on or in base
• CPC Class Codes: Y10T 29/49165 by forming conductive walled aperture in base

Abstract

A method for manufacturing a printed circuit board with a capacitor embedded therein which has a dielectric film using laser lift off, and a capacitor manufactured thereby. In the method, a dielectric film is formed on a transparent substrate and heat-treated. A first conductive layer is formed on the heat-treated dielectric film. A laser beam is irradiated onto a stack formed, from below the transparent substrate, to separate the transparent substrate from the stack. After the transparent substrate is separated from the stack, a second conductive layer is formed with a predetermined pattern on the dielectric film. Also, an insulating layer and a third conductive layer are formed on the first and second conductive layers to alternate with each other in a predetermined number.

Claims

1. A method for manufacturing a printed circuit board with a thin film capacitor embedded therein, the method comprising:

forming a dielectric film comprising one dielectric composition selected from a group consisting of lead zirconium titanate, barium titanate, strontium bismuth tantalate, bismuth lanthanum titanate, lead magnesium niobate-lead titanate, and lead zinc niobate-lead titanate on a transparent substrate to form a capacitor and heat-treating the dielectric film to improve crystallinity of the dielectric film;

forming a first conductive layer on the heat-treated dielectric film;

irradiating a laser beam onto a stack formed, from below the transparent substrate, to form volatile elements in the dielectric film and transform the structure of the dielectric film from a crystalline structure into an amorphous structure;

separating the transparent substrate from the dielectric film;

after the transparent substrate is separated from the stack, forming a second conductive layer with a predetermined pattern on the dielectric film;

after separating the transparent substrate, removing an amorphous damaged layer formed on a top surface of the dielectric film, which is caused by heat of the laser; and

forming an insulating layer and a third conductive layer on the first and second conductive layers to alternate with each other in a predetermined number.

2. The method according to claim 1, wherein the transparent substrate comprises one selected from a group consisting of sapphire, quartz, glass, MgO, lanthanum aluminate, fused silica, and zirconia.

3. The method according to claim 1, wherein the dielectric film further comprises a dopant added to the dielectric composition.

4. The method according to claim 1, wherein at least one of the first, second and third conductive layers comprises one selected from a group consisting of Au, Ag, Ni, Cu, Al, Pt, Ti, Ir, IrO₂, Ru, and RuO₂.

5. The method according to claim 1, wherein at least one of the first, second and third conductive layers is formed by a process selected from a group consisting of PVD, CVD, ALD, screen printing and inkjet printing.

6. The method according to claim 5, wherein at least one of the first, second and third conductive layers is formed by the PVD using sputtering or e-beam.

7. The method according to claim 1, wherein at least one of the first, second and third conductive layers is formed by forming a metal seed layer by PVD and electrolytically plating the metal seed layer.

8. The method according to claim 1, wherein the transparent substrate is separated from the stack by an excimer laser or an Nd YAG laser.

9. The method according to claim 1, wherein the transparent substrate is separated from the stack by a Femto laser.

10. The method according to claim 1, further comprising:

after forming the dielectric film, forming a bonding layer or a barrier layer on the dielectric film.

11. The method according to claim 10, wherein the step of forming the bonding layer or the barrier layer comprises sputtering Ti or Cr.

12. A printed circuit board with a thin film capacitor embedded therein manufactured as described in claim 1.