Optical sensor device and electronic apparatus with an amplifier circuit and dual level shift circuit

• US 8,039,782 B2
• Filed: 07/27/2007
• Issued: 10/18/2011
• Est. Priority Date: 09/19/2003
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Maruyama, Junya, Koyama, Jun, Nishi, Kazuo, Osada, Takeshi, Matsuzaki, Takanori
• Primary Examiner(s): LE, QUE TAN
• Application Number:
  US11/829,709
• Publication Number:
  US 20070267665A1
• Time in Patent Office: 1,544 Days
• Field of Search: 250/214.R, 250/214.1, 250/214.LA, 327512-515, 327/530, 327/538, 327/539, 330/54, 330/92, 330/133, 330/59, 330/129, 330/136, 455/127.3, 455/126
• US Class Current: 250/214.00R
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14692 Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon

Abstract

In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It leads to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can be also reduced.

Claims

1. An optical sensor device comprising:

an optical sensor element;

an amplifier circuit;

an I-V conversion resistor;

a first level shift circuit; and

a second level shift circuit,

wherein a first input terminal of the amplifier circuit is electrically connected to the I-V conversion resistor and a first electrode of the optical sensor element through the first level shift circuit,

wherein an output terminal of the amplifier circuit is electrically connected to a second input terminal of the amplifier circuit through the second level shift circuit, and

wherein the optical sensor element and the amplifier circuit are formed over a substrate.

2. The optical sensor device according to claim 1, wherein the optical sensor element comprises amorphous silicon.

3. The optical sensor device according to claim 1, wherein the optical sensor element comprises an amorphous silicon photodiode.

4. The optical sensor device according to claim 1, wherein the optical sensor element comprises polysilicon.

5. The optical sensor device according to claim 1, wherein the optical sensor element comprises a polysilicon photodiode.

6. The optical sensor device according to claim 1, wherein the amplifier circuit comprises a thin film transistor.

7. The optical sensor device according to claim 1, wherein the amplifier circuit is an operational amplifier.

8. The optical sensor device according to claim 1, wherein the optical sensor element and the amplifier circuit are formed over a plastic substrate.

9. The optical sensor device according to claim 1, wherein the optical sensor element and the amplifier circuit are formed over a glass substrate.

10. The optical sensor device according to claim 1, wherein each of the first level shift circuit and the second level shift circuit comprises a p-channel thin film transistor and a constant current source.

11. The optical sensor device according to claim 1, wherein each of the first level shift circuit and the second level shift circuit comprises an n-channel thin film transistor and a constant current source.

12. An electronic apparatus having the optical sensor device according to claim 1, wherein the electronic apparatus is one selected from the group consisting of a video camera, a digital camera, a head mounted display, a game machine, a car navigation system, a personal computer, a personal digital assistant and a television.

25. The optical sensor device according to claim 1, further comprising an external power source electrically connected to the first input terminal of the amplifier circuit and the first electrode of the optical sensor element through the I-V conversion resistor.

13. An electronic apparatus comprising:

a display portion; and

an optical sensor device operationally connected to the display portion, the optical sensor device comprising;

an optical sensor element;

an amplifier circuit;

an I-V conversion resistor;

a first level shift circuit; and

a second level shift circuit,

wherein a first input terminal of the amplifier circuit is electrically connected to the I-V conversion resistor and a first electrode of the optical sensor element through the first level shift circuit,

wherein an output terminal of the amplifier circuit is electrically connected to a second input terminal of the amplifier circuit through the second level shift circuit, and

wherein the optical sensor element and the amplifier circuit are formed over a substrate.

14. The electronic apparatus according to claim 13, wherein the optical sensor element comprises amorphous silicon.

15. The electronic apparatus according to claim 13, wherein the optical sensor element comprises an amorphous silicon photodiode.

16. The electronic apparatus according to claim 13, wherein the optical sensor element comprises polysilicon.

17. The electronic apparatus according to claim 13, wherein the optical sensor element comprises a polysilicon photodiode.

18. The electronic apparatus according to claim 13, wherein the amplifier circuit comprises a thin film transistor.

19. The electronic apparatus according to claim 13, wherein the amplifier circuit is an operational amplifier.

20. The electronic apparatus according to claim 13, wherein the optical sensor element and the amplifier circuit are formed over a plastic substrate.

21. The electronic apparatus according to claim 13, wherein the optical sensor element and the amplifier circuit are formed over a glass substrate.

22. The electronic apparatus according to claim 13, wherein each of the first level shift circuit and the second level shift circuit comprises a p-channel thin film transistor and a constant current source.

23. The electronic apparatus according to claim 13, wherein each of the first level shift circuit and the second level shift circuit comprises an n-channel thin film transistor and a constant current source.

24. The electronic apparatus according to claim 13, wherein the electronic apparatus is one selected from the group consisting of a video camera, a digital camera, a head mounted display, a game machine, a car navigation system, a personal computer, a personal digital assistant and a television.

26. The electronic apparatus according to claim 13, further comprising an external power source electrically connected to the first input terminal of the amplifier circuit and the first electrode of the optical sensor element through the I-V conversion resistor.