GaN compound semiconductor light emitting element and method of manufacturing the same
First Claim
1. A light emitting element, comprising:
- a metallic support layer;
a reflective film electrode arranged on the metallic support layer;
a nitride semiconductor structure arranged on the reflective film electrode, the nitride semiconductor structure comprising a first-type nitride semiconductor layer, an active layer, and a second-type nitride semiconductor layer;
an anti-reflective layer arranged on the nitride semiconductor structure;
an insulation layer, the nitride semiconductor structure being arranged on the insulation layer, and the insulation layer extending beyond an edge of the nitride semiconductor structure; and
a metallic protective film layer, the reflective film electrode and the insulation layer being arranged on the metallic protective film layer.
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Abstract
The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P-GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N-GaN layer.
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Citations
20 Claims
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1. A light emitting element, comprising:
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a metallic support layer; a reflective film electrode arranged on the metallic support layer; a nitride semiconductor structure arranged on the reflective film electrode, the nitride semiconductor structure comprising a first-type nitride semiconductor layer, an active layer, and a second-type nitride semiconductor layer; an anti-reflective layer arranged on the nitride semiconductor structure; an insulation layer, the nitride semiconductor structure being arranged on the insulation layer, and the insulation layer extending beyond an edge of the nitride semiconductor structure; and a metallic protective film layer, the reflective film electrode and the insulation layer being arranged on the metallic protective film layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification