(110)-oriented p-channel trench MOSFET having high-K gate dielectric
First Claim
1. A semiconductor device having a heavily doped p-type (110) semiconductor layer overlying a metal substrate, comprising:
- a first metal layer;
a first p-type semiconductor layer overlying the first metal layer, the first p-type semiconductor layer being heavily doped and having a surface crystal orientating of (110), the first p-type semiconductor layer being characterized by a first conductivity;
a second p-type semiconductor layer overlying the first p-type semiconductor layer, the second semiconductor layer having a surface crystal orientation of (110) and a second conductivity that is lower than the first conductivity;
a gate dielectric layer including a high dielectric constant material, the gate dielectric layer lining a (110) crystalline plane in the second p-type semiconductor layer; and
a second metal layer overlying the second p-type semiconductor layer,wherein a current conduction between the first metal layer to the second metal layer is characterized by a hole mobility along a <
110>
crystalline orientation and on (110) crystalline plane.
7 Assignments
0 Petitions
Accused Products
Abstract
A method of forming a field effect transistor having a heavily doped p-type (110) semiconductor layer over a metal substrate starts with providing a heavily doped p-type (110) silicon layer, and forming a lightly doped p-type (110) silicon layer on the P heavily doped-type (110) silicon layer. The method also includes forming a p-channel MOSFET which has a channel region along a (110) crystalline plane in the lightly doped p-type (110) silicon layer to allow a current conduction in a <110> direction. The p-channel MOSFET also includes a gate dielectric layer having a high dielectric constant material lining the (110) crystalline plane. The method further includes forming a top conductor layer overlying the lightly doped p-type (110) silicon layer and a bottom conductor layer underlying the heavily doped p-type (110) silicon layer. A current conduction from the top conductor layer to the bottom conductor layer is characterized by a hole mobility along a <110> crystalline orientation and on a (110) crystalline plane.
51 Citations
25 Claims
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1. A semiconductor device having a heavily doped p-type (110) semiconductor layer overlying a metal substrate, comprising:
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a first metal layer; a first p-type semiconductor layer overlying the first metal layer, the first p-type semiconductor layer being heavily doped and having a surface crystal orientating of (110), the first p-type semiconductor layer being characterized by a first conductivity; a second p-type semiconductor layer overlying the first p-type semiconductor layer, the second semiconductor layer having a surface crystal orientation of (110) and a second conductivity that is lower than the first conductivity; a gate dielectric layer including a high dielectric constant material, the gate dielectric layer lining a (110) crystalline plane in the second p-type semiconductor layer; and a second metal layer overlying the second p-type semiconductor layer, wherein a current conduction between the first metal layer to the second metal layer is characterized by a hole mobility along a <
110>
crystalline orientation and on (110) crystalline plane. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A vertical trench gate MOSFET device formed in a (110) substrate, comprising:
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a bottom metal layer; a heavily-doped (110) p-type semiconductor layer overlying the bottom metal layer; a lightly-doped (110) p-type semiconductor layer overlying heavily-doped (110) p-type semiconductor layer; an N-type body region in the lightly-doped (110) p-type semiconductor layer; and a trench extending through the body region and into a bottom portion of the lightly-doped (110) p-type semiconductor layer underlying the body region; a channel region adjacent a trench sidewall along a (110) crystalline plane to allow a current conduction in a <
110>
direction,a gate dielectric layer having a high dielectric constant material lining the trench sidewall adjacent the channel region; a gate electrode over the gate dielectric in the trench; p-type source regions flanking each side of the gate electrode in the trench; a p-type drain region including at least a portion of the heavily doped (110) p-type semiconductor layer; and a top metal layer overlying the lightly-doped (110) p-type semiconductor layer, the top metal layer being coupled to the source regions and the body region; and wherein the first and the second metal layers provide external contacts for the current conduction in the <
110>
direction. - View Dependent Claims (20, 21)
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22. A vertical shielded gate trench MOSFET device formed in a (110) substrate, comprising:
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a bottom metal layer; a first p-type semiconductor layer overlying the bottom metal layer, the first p-type semiconductor layer being characterized by a surface crystal orientating of (110) and a first conductivity, the first p-type semiconductor layer being heavily doped; a second p-type semiconductor layer having a surface crystal orientation of (110) and overlying the first p-type semiconductor layer, the second p-type semiconductor layer being characterized by a lower conductivity than the first conductivity; an N-type body region in the second p-type semiconductor layer; a trench extending through the body region and into a bottom portion of the second p-type semiconductor layer underlying the body region; a shield dielectric lining sidewalls and a bottom surface of the trench, the shield dielectric including a first shield oxide layer; a shield electrode in a lower portion of the trench, the shield electrode being insulated from the semiconductor region by the shield dielectric; an inter-electrode dielectric overlying the shield electrode; a channel region adjacent a trench sidewall along a (110) crystalline plane to allow a current conduction in a <
110>
direction,a gate dielectric layer having a high dielectric constant material lining the trench sidewall adjacent the channel region; a gate electrode in an upper portion of the trench over the inter-electrode dielectric, the gate electrode being insulated from the semiconductor region by the gate dielectric; p-type source regions flanking each side of the gate electrode in the trench; a p-type drain region including at least a portion of the heavily doped (110) p-type semiconductor layer; and a top metal layer overlying the second p-type semiconductor layer, the top metal layer being coupled to the source regions and the body region, wherein the first and the second metal layers provide external contacts for the current conduction in the <
110>
direction. - View Dependent Claims (23, 24)
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25. A planar power MOSFET device, the device comprising:
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a bottom metal layer; a heavily-doped (110) p-type drain region overlying the bottom metal layer; a lightly-doped (110) p-type drift overlying heavily-doped (110) p-type semiconductor layer; an N-type well region in an upper portion of the drift region, a surface portion of the N-type well region being configured; a heavily doped p-type source region in the N-type well region, a surface portion of the N-type well region between the source region and the drift region being configured as the channel region to provide a current conduction path along a <
110>
direction in an (110) plane;a gate dielectric layer having a high dielectric constant material overlying the channel region; and a gate electrode overlying the gate dielectric which overlies the channel region; and a top metal layer coupled to the source regions and the body region; and wherein the top and the bottom metal layers provide external contacts for the current conduction in the <
110>
direction.
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Specification