Semiconductor ceramic powder, semiconductor ceramic, and monolithic semiconductor ceramic capacitor
First Claim
1. A semiconductor ceramic powder which is a SrTiO3-based grain boundary insulation type semiconductor ceramic powder containing a donor element as a solid solution in crystal grains and an acceptor element at least in crystal grain boundaries, whereinthe integral width of (222) face of the crystal face is 0.500°
- or less, andthe average powder grain size of crystal grains is 1.0 μ
m or less.
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Accused Products
Abstract
A SrTiO3-based grain boundary insulation type semiconductor ceramic contains a donor element in solid solution in crystal grains, an acceptor element at least in crystal grain boundaries, an integral width of (222) face of the crystal face of 0.500° or less, and an average powder grain size of crystal grains of 1.0 μm or less. A semiconductor ceramic is obtained by firing this ceramic, and a monolithic semiconductor ceramic capacitor is obtained by using the semiconductor ceramic. The SrTiO3-based grain boundary insulation type semiconductor ceramic powder has a large apparent relative dielectric constant ∈rAPP of 5,000 or more even when the average ceramic grain size of crystal grains is 1.0 μm or less and which has an excellent insulating property. The monolithic semiconductor ceramic capacitor is capable of having a large capacity through reduction in thickness and multilayering.
14 Citations
20 Claims
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1. A semiconductor ceramic powder which is a SrTiO3-based grain boundary insulation type semiconductor ceramic powder containing a donor element as a solid solution in crystal grains and an acceptor element at least in crystal grain boundaries, wherein
the integral width of (222) face of the crystal face is 0.500° - or less, and
the average powder grain size of crystal grains is 1.0 μ
m or less. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
- or less, and
Specification