Vicinal gallium nitride substrate for high quality homoepitaxy
First Claim
1. An (Al,In,Ga)N substrate including a (Al,In,Ga)N (0001) surface offcut from the [0001] direction at a non-zero angle, and including a (Al,In,Ga)N (000 1) surface offcut from the [000 1] direction at a non-zero angle, wherein the offcut (Al,In,Ga)N (0001) surface is lapped, polished, or chemical mechanically polished.
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Accused Products
Abstract
A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the <0001> direction predominantly toward a direction selected from the group consisting of <10-10> and <11-20> directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3 E6 cm−2. The substrate may be formed by offcut slicing of a corresponding boule or wafer blank, by offcut lapping or growth of the substrate body on a corresponding vicinal heteroepitaxial substrate, e.g., of offcut sapphire. Both upper and lower surfaces may be offcut. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III-V nitride-based microelectronic and opto-electronic devices.
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Citations
23 Claims
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1. An (Al,In,Ga)N substrate including a (Al,In,Ga)N (0001) surface offcut from the [0001] direction at a non-zero angle, and including a (Al,In,Ga)N (000
1 ) surface offcut from the [0001 ] direction at a non-zero angle, wherein the offcut (Al,In,Ga)N (0001) surface is lapped, polished, or chemical mechanically polished.
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14. An (Al,In,Ga)N substrate including a (Al,In,Ga)N (0001) surface offcut from the [0001] direction at an angle in a range from about 0.2 to about 10 degrees, and including a (Al,In,Ga)N (000
1 ) surface offcut from the [0001 ] direction at an angle in a range from about 0.2 to about 10 degrees, wherein the (Al,In,Ga)N (0001) surface is offcut from the <- 0001>
direction predominantly towards a direction selected from the group consisting of <
101 0> and
<
111 0>
directions, and wherein the offcut (Al,In,Ga)N (0001) surface is lapped, polished, or chemical mechanically polished. - View Dependent Claims (15, 16, 17, 18)
- 0001>
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21. A method comprising:
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surface processing a (Al,In,Ga)N wafer along a first side thereof produce a (Al,In,Ga)N wafer having a wedge conformation; and surface processing the (Al,In,Ga)N wafer having a wedge conformation along a second side thereof to alter the wedge conformation; wherein, following the first and second surface processing steps, the first side of the (Al,In,Ga)N wafer is tilted away from the (Al,In,Ga)N lattice c-plane, and the second side of the (Al,In,Ga)N wafer is tilted away from the (Al,In,Ga)N lattice c-plane. - View Dependent Claims (22, 23)
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Specification