Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device
First Claim
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1. A method for forming a conductive oxide layer on a substrate, the method comprising:
- sputtering a target in a sputtering atmosphere to deposit a transparent conductive oxide layer on a substrate, wherein the target comprises cadmium stannate, and wherein the transparent conductive oxide layer is deposited at a sputtering temperature of about 100°
C. to about 600°
C.; and
,during sputtering, adding a cadmium gas source to the sputtering atmosphere to provide an increased amount of cadmium to the sputtering atmosphere than supplied by the target.
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Abstract
Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate from a target (e.g., including cadmium stannate) in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.
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Citations
19 Claims
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1. A method for forming a conductive oxide layer on a substrate, the method comprising:
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sputtering a target in a sputtering atmosphere to deposit a transparent conductive oxide layer on a substrate, wherein the target comprises cadmium stannate, and wherein the transparent conductive oxide layer is deposited at a sputtering temperature of about 100°
C. to about 600°
C.; and
,during sputtering, adding a cadmium gas source to the sputtering atmosphere to provide an increased amount of cadmium to the sputtering atmosphere than supplied by the target. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for manufacturing a cadmium telluride based thin film photovoltaic device, the method comprising:
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sputtering a target in a sputtering atmosphere to deposit a transparent conductive oxide layer on a substrate, wherein the target comprises cadmium stannate, and wherein the transparent conductive oxide layer is deposited at a sputtering temperature of about 100°
C. to about 600°
C.; and
,during sputtering, adding a cadmium gas source to the sputtering atmosphere to provide an increased amount of cadmium to the sputtering atmosphere than supplied by the target; forming a resistive transparent buffer layer over the transparent conductive oxide layer; forming a cadmium sulfide layer over the resistive transparent layer; and
,forming a cadmium telluride layer over the cadmium sulfide layer. - View Dependent Claims (16, 17, 18, 19)
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Specification