Semiconductor device, method for manufacturing semiconductor device and apparatus for manufacturing semiconductor
First Claim
1. A method for manufacturing a semiconductor device including a multilayer wiring comprising:
- a semiconductor substrate;
an insulating film formed on the semiconductor substrate such, at least one part of the insulating film being formed of a first insulating film;
a wiring groove and a via hole formed in the insulating film;
a wire and a connecting plug formed from a metal respectively filled in the wiring groove and the via hole; and
a modified layer formed on an interface between the first insulating film and the metal,wherein the first insulating film is at least one layer insulating film including a siloxane structure containing silicon, oxygen and carbon,the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms, andthe modified layer contains a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film, the method comprising;
forming the first insulating film containing the siloxane structure;
forming a hard mask film on the first insulating film;
applying a photoresist to the hard mask film and then patterning a groove thereon;
forming a mask pattern through forming a groove in the hard mask film by a dry etching using the photoresist as a mask;
removing the photoresist by an oxygen asking;
forming the wiring groove and the via hole in the first insulating film by a dry etching using the mask pattern as a mask;
forming the modified layer by performing modification treatment onto side faces of the wiring groove and the via hole in the first insulating film; and
forming the wire and the connecting plug respectively by filling the wiring groove and the via hole with the metal.
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Accused Products
Abstract
The present invention provides a multilayer wiring technology by which high adhesiveness and high insulation reliability between wirings are obtained, while maintaining effective low capacitance between wirings. A semiconductor device is characterized in that a first insulating film is an insulating film formed of at least one layer which contains a siloxane structure containing silicon, oxygen and carbon; the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms; and a modified layer which containing a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film is formed on at least one of an interface between the first insulating film and the metal and an interface between the first insulating film and a second insulating film.
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Citations
18 Claims
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1. A method for manufacturing a semiconductor device including a multilayer wiring comprising:
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a semiconductor substrate; an insulating film formed on the semiconductor substrate such, at least one part of the insulating film being formed of a first insulating film; a wiring groove and a via hole formed in the insulating film; a wire and a connecting plug formed from a metal respectively filled in the wiring groove and the via hole; and a modified layer formed on an interface between the first insulating film and the metal, wherein the first insulating film is at least one layer insulating film including a siloxane structure containing silicon, oxygen and carbon, the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms, and the modified layer contains a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film, the method comprising; forming the first insulating film containing the siloxane structure; forming a hard mask film on the first insulating film; applying a photoresist to the hard mask film and then patterning a groove thereon; forming a mask pattern through forming a groove in the hard mask film by a dry etching using the photoresist as a mask; removing the photoresist by an oxygen asking; forming the wiring groove and the via hole in the first insulating film by a dry etching using the mask pattern as a mask; forming the modified layer by performing modification treatment onto side faces of the wiring groove and the via hole in the first insulating film; and forming the wire and the connecting plug respectively by filling the wiring groove and the via hole with the metal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a semiconductor device including a multilayer wiring comprising:
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a semiconductor substrate; an insulating film formed on the semiconductor substrate, at least one part of the insulating film being formed of a first insulating film and a second insulating film; a wiring groove and a via hole formed in the insulating film; a wire and a connecting plug formed from a metal respectively filled in the wiring groove and the via hole; and a modified layer formed on an interface between the first insulating film and the metal and an interface between the first insulating film and the second insulating film, wherein the first insulating film is at least one layer insulating film including a siloxane structure containing silicon, oxygen and carbon, the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms, and the modified layer contains a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film, the method comprising; forming the second insulating film containing a cyclic siloxane structure containing silicon, oxygen and carbon; forming the modified layer by performing modification treatment onto a surface of the second insulating film; forming the first insulating film on the modified layer; forming a hard mask film on the first insulating film; applying a photoresist to the hard mask film and then patterning a groove thereon; forming a mask pattern through forming a groove in the hard mask film by a dry etching using the photoresist as a mask; removing the photoresist by an oxygen ashing; forming the wiring groove and the via hole in the first insulating film and the second insulating film by a dry etching using the mask pattern as a mask; forming the modified layer by performing modification treatment onto side faces of the wiring groove and the via hole in the first insulating film and the second insulating film; and forming the wire and the connecting plug respectively by filling the wiring groove and the via hole with the metal. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification