Electronic device and method for producing electronic device

• US 8,043,978 B2
• Filed: 08/19/2008
• Issued: 10/25/2011
• Est. Priority Date: 10/11/2007
• Status: Expired due to Fees

• Current Assignee: Riken
• Original Assignee: Riken
• Inventors: Tsukagoshi, Kazuhito, Odaka, Syunsuke, Miyazaki, Hisao, Aoyagi, Yoshinobu
• Primary Examiner(s): Vu; David
• Assistant Examiner(s): TAYLOR, EARL N
• Application Number:
  US12/194,106
• Publication Number:
  US 20090139752A1
• Time in Patent Office: 1,162 Days
• Field of Search: 977/734, 977/742, 977/750, 977/752, 977/755, 977/758, 977/762, 977/938, 438/688, 438/770, 438/773, 438/FOR.494, 437/983, 148/276, 148/277, 148/285
• US Class Current: 438/768
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/1606 Graphene
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/7781 with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
• CPC Class Codes: H01L 29/78684 having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys H01L29/7869 takes precedence

Abstract

Provided is a novel electronic device that comprises graphite, graphene or the like.

An electronic device having a substrate, a layer comprising a 6-member ring-structured carbon homologue as the main ingredient, a pair of electrodes, a layer comprising aluminium oxide as the main ingredient and disposed between the pair of electrodes, and a layer comprising aluminium as the main ingredient, wherein the layer comprising aluminium oxide as the main ingredient is disposed between the layer comprising a 6-member ring-structured carbon homologue as the main ingredient and the layer comprising aluminium as the main ingredient so as to be in contact with the two layers.

Claims

1. A method for producing an electronic device, comprising forming a layer comprising graphite or graphene as the main ingredient on a substrate, forming a layer comprising aluminium as the main ingredient so as to be in contact with the layer comprising graphite or graphene as the main ingredient, forming a pair of electrodes contacting the layer comprising graphite or graphene as the main ingredient, and forming a layer comprising aluminium oxide as the main ingredient between the layer comprising graphite or graphene as the main ingredient and the layer comprising aluminium as the main ingredient by oxidation of the layer comprising aluminium as the main ingredient by contacting aluminium in the layer comprising aluminium as the main ingredient with the layer comprising graphite or graphene as the main ingredient in air.

2. A method for producing an electronic device, comprising forming a layer comprising graphite or graphene as the main ingredient on a substrate, forming a pair of electrodes contacting the layer comprising graphite or graphene as the main ingredient, forming a layer comprising aluminium as the main ingredient so as to be in contact with the layer comprising graphite or graphene as the main ingredient, and forming a layer comprising aluminium oxide as the main ingredient between the layer comprising graphite or graphene as the main ingredient and the layer comprising aluminium as the main ingredient by oxidation of the layer comprising aluminium as the main ingredient by contacting aluminium in the layer comprising aluminium as the main ingredient with the layer comprising graphite or graphene as the main ingredient in air.