Semiconductor device with trench field plate including first and second semiconductor materials
First Claim
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1. A semiconductor device comprising:
- a semiconductor body;
a drift region of a first conductivity type;
at least one trench extending into the drift region;
at least one gate electrode;
a field plate in at least a portion of the at least one trench; and
a dielectric material, wherein the dielectric material at least partially surrounds the gate electrode and the field plate;
wherein the field plate comprises a first semiconducting material at least partially of a second conductivity type and a second semiconducting material of the first conductivity type, the second conductivity type being complementary to the first conductivity type, and a diffusion barrier layer arranged at least partially between the first semiconducting material and the second semiconducting material.
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Abstract
In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.
17 Citations
22 Claims
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1. A semiconductor device comprising:
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a semiconductor body; a drift region of a first conductivity type; at least one trench extending into the drift region; at least one gate electrode; a field plate in at least a portion of the at least one trench; and a dielectric material, wherein the dielectric material at least partially surrounds the gate electrode and the field plate; wherein the field plate comprises a first semiconducting material at least partially of a second conductivity type and a second semiconducting material of the first conductivity type, the second conductivity type being complementary to the first conductivity type, and a diffusion barrier layer arranged at least partially between the first semiconducting material and the second semiconducting material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor device comprising:
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a semiconductor body; a drift region of a first conductivity type; at least one trench extending into the drift region; at least one gate electrode; a field plate in at least a portion of the at least one trench, the field plate comprising a first semiconducting material that is at least partially of a second conductivity type, the second conductivity type that is complementary to the first conductivity type; and a dielectric material at least partially surrounding the gate electrode and the field plate; wherein the field plate further comprises a second semiconducting material of the first conductivity type, the second semiconducting material being arranged at least partially between the first semiconducting material and a contact region and adjacent to the contact region and comprising a doping concentration higher than a doping concentration of the first semiconducting material, and a diffusion barrier layer, the diffusion barrier layer being arranged at least partially between the first semiconducting material and the second semiconducting material. - View Dependent Claims (19, 20)
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21. A field effect transistor comprising:
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a semiconductor body; a drift region of a first conductivity type; at least one trench extending into the drift region; at least one gate electrode; a field plate in at least a portion of the at least one trench; and a dielectric material, wherein the dielectric material at least partially surrounds the gate electrode and the field plate; wherein the field plate comprises a first semiconducting material at least partially of a second conductivity type and a second semiconducting material of the first conductivity type, the second conductivity type being complementary to the first conductivity type, and a diffusion barrier layer arranged at least partially between the first semiconducting material and the second semiconducting material.
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22. A method comprising:
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providing a semiconductor body, a drift region of a first conductivity type, at least one trench extending into the drift region, at least one gate electrode, and a field plate comprising a first semiconducting material in at least a portion of the at least one trench; depositing a dielectric material such that it at least partially surrounds the gate electrode and the field plate, wherein the field plate comprises the first semiconducting material at least partially of a second conductivity type and a second material of the first conductivity type, the second conductivity type being complementary to the first conductivity type; and arranging a diffusion barrier layer at least partially between the first semiconducting material and the second semiconducting material.
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Specification