×

Planar TMBS rectifier

  • US 8,044,461 B2
  • Filed: 06/07/2010
  • Issued: 10/25/2011
  • Est. Priority Date: 12/06/2006
  • Status: Active Grant
First Claim
Patent Images

1. A trench MOS barrier schottky (TMBS) rectifier comprising:

  • a plurality of trenches extending into a semiconductor layer,a dielectric layer lining the trench sidewalls;

    a conductive electrode having a top surface that is substantially coplanar with a top surface of the semiconductor layer adjacent the trench; and

    an interconnect layer comprising a conformal barrier metal layer which contacts the semiconductor layer so as to form a schottky contact with the semiconductor layer.

View all claims
  • 6 Assignments
Timeline View
Assignment View
    ×
    ×