Self aligned diode fabrication method and self aligned laser diode

• US 8,045,595 B2
• Filed: 11/15/2006
• Issued: 10/25/2011
• Est. Priority Date: 11/15/2006
• Status: Active Grant

• Current Assignee: Creeled Incorporated
• Original Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Inventors: Ma, Yong
• Primary Examiner(s): Park; Kinam
• Application Number:
  US11/600,618
• Publication Number:
  US 20080112454A1
• Time in Patent Office: 1,805 Days
• Field of Search: 372/45.01, 372/45.011, 372/43.01
• US Class Current: 372/45.011
• CPC Class Codes: H01S 2301/176 Specific passivation layers on surfaces other than the emission facet
• CPC Class Codes: H01S 5/04254 characterised by the shape
• CPC Class Codes: H01S 5/04257 having positive and negative electrodes on the same side of the substrate
• CPC Class Codes: H01S 5/2086 lateral etch control, e.g. mask induced
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/2214 based on oxides or nitrides

Abstract

A method for fabricating a laser diode comprising providing a laser diode epitaxial structure and depositing a metal layer stack on the epitaxial structure, the stack comprising a contact and sacrificial layer. A ridge is formed in the laser diode epitaxial structure, the stack being the mask forming the ridge. An insulating layer is deposited over the ridge and at least a portion of the sacrificial layer is removed. At least a portion of the insulating thin film at the top of the stack is also removed. A pad metal is deposited in electrical contact with the contact and is insulated from the ridge and laser diode epitaxial structures by the insulating layer.

Claims

1. A laser diode, comprising:

a laser diode epitaxial structure comprising a ridge with mesas on the sides of said ridge, said ridge having a top surface and side surfaces, said ridge comprising a metal p-contact and a protection layer on said p-contact;

an insulating layer covering said side surfaces of said ridge; and

a pad metal on said insulating layer and in electrical contact with said p-contact through said top surface of said ridge, said pad metal on said side surfaces of said ridge and insulated from said side surfaces of said ridge by said insulating layer.

2. The laser diode of claim 1, wherein said ridge provides optical and electrical confinement during laser diode operation.

3. The laser diode of claim 1, wherein said laser diode epitaxial structure is made from the Group-III nitride material system.

4. The laser diode of claim 1, wherein said insulating layer comprises a dielectric material.

5. The laser diode of claim 1, wherein said protection layer comprises one or more metals.

6. The laser diode of claim 1, wherein said p-contact comprises gold (Au) and platinum (Pt).

7. The laser diode of claim 1, wherein said pad metal comprises gold (Au).

8. A laser diode, comprising:

a laser diode epitaxial structure comprising a ridge having a top surface and side surface, said ridge comprising a metal p-contact and a means for protecting said p-contact during fabrication of said diode;

an insulating thin film on said laser diode epitaxial structure at least a portion of said top surface of said ridge not covered by said insulating thin film; and

a pad metal on said laser diode epitaxial structure, said pad metal in electrical contact with said p-contact through said top surface of said ridge, said pad metal electrically insulated from said side surfaces of said ridge by said insulating thin film.

9. The laser diode of claim 8, further comprising mesas at the base of and on both sides of said ridge, at least a portion of said mesas covered by said insulating layer such that said mesas are insulated from said pad metal.

10. The laser diode of claim 8, wherein said ridge provides optical and electrical confinement during laser diode operation.

11. The laser diode of claim 8, wherein said laser diode epitaxial structure is made from the Group-III nitride material system.

12. The laser diode of claim 8, wherein said insulating thin film comprises a dielectric material.

13. The laser diode of claim 8, wherein said p-contact comprises gold (Au) and platinum (Pt).

14. The laser diode of claim 8, wherein said pad metal comprises gold (Au).

15. The laser diode of claim 8, wherein said p-contact comprises one or more elements from group comprising gold, palladium, platinum and nickel.

16. A solid state emitter, comprising:

an epitaxial structure comprising a ridge with mesas on the sides of said ridge, said ridge having a top surface and side surfaces;

a p-contact on said ridge;

an insulating layer covering said side surfaces of said ridge and no more than a portion of said top surface of said ridge; and

a pad metal on said insulating layer and in electrical contact with said p-contact through said top surface of said ridge, said pad metal running from one of said side surfaces, over said top surface to another of said side surfaces, and insulated from said side surfaces of said ridge and said mesas by said insulating layer.