Germanium FinFETs having dielectric punch-through stoppers
First Claim
1. A method of forming a semiconductor structure, the method comprising:
- providing a composite substrate comprising a bulk silicon substrate and a silicon germanium (SiGe) layer over and adjoining the bulk silicon substrate;
performing a first condensation to the SiGe layer to form a condensed SiGe layer, wherein the condensed SiGe layer has a substantially uniform germanium concentration;
etching the condensed SiGe layer and a top portion of the bulk silicon substrate to form a composite fin, wherein the composite fin comprises a silicon fin and a condensed SiGe fin over the silicon fin;
oxidizing a portion of the silicon fin, wherein the step of oxidizing comprises;
filling a dielectric material to embed a bottom portion of the silicon fin therein;
forming a mask to cover a top surface and sidewalls of the condensed SiGe fin, wherein the portion of the silicon fin is exposed; and
performing an oxidation to oxidize the portion of the silicon fin and to form an oxide region; and
performing a second condensation to the condensed SiGe fin.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of forming a semiconductor structure includes providing a composite substrate, which includes a bulk silicon substrate and a silicon germanium (SiGe) layer over and adjoining the bulk silicon substrate. A first condensation is performed to the SiGe layer to form a condensed SiGe layer, so that the condensed SiGe layer has a substantially uniform germanium concentration. The condensed SiGe layer and a top portion of the bulk silicon substrate are etched to form a composite fin including a silicon fin and a condensed SiGe fin over the silicon fine. The method further includes oxidizing a portion of the silicon fin; and performing a second condensation to the condensed SiGe fin.
303 Citations
17 Claims
-
1. A method of forming a semiconductor structure, the method comprising:
-
providing a composite substrate comprising a bulk silicon substrate and a silicon germanium (SiGe) layer over and adjoining the bulk silicon substrate; performing a first condensation to the SiGe layer to form a condensed SiGe layer, wherein the condensed SiGe layer has a substantially uniform germanium concentration; etching the condensed SiGe layer and a top portion of the bulk silicon substrate to form a composite fin, wherein the composite fin comprises a silicon fin and a condensed SiGe fin over the silicon fin; oxidizing a portion of the silicon fin, wherein the step of oxidizing comprises; filling a dielectric material to embed a bottom portion of the silicon fin therein; forming a mask to cover a top surface and sidewalls of the condensed SiGe fin, wherein the portion of the silicon fin is exposed; and performing an oxidation to oxidize the portion of the silicon fin and to form an oxide region; and performing a second condensation to the condensed SiGe fin. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A method of forming a semiconductor structure, the method comprising:
-
providing a bulk silicon substrate; epitaxially growing a silicon germanium (SiGe) layer on the bulk silicon substrate; performing a first condensation to the SiGe layer to form a condensed SiGe layer at a temperature between about 825°
C. and about 880°
C.;etching the condensed SiGe layer and a top portion of the bulk silicon substrate to form a composite fin, wherein the composite fin comprises a silicon fin and a condensed SiGe fin over the silicon fin; oxidizing an upper portion of the silicon fin, wherein the condensed SiGe fin is not oxidized; and performing a second condensation to the condensed SiGe fin to form a substantially pure germanium fin. - View Dependent Claims (9, 10)
-
-
11. A method of forming a semiconductor structure, the method comprising:
-
providing a bulk silicon substrate; epitaxially growing a silicon germanium (SiGe) layer on the bulk silicon substrate; performing a first condensation to the SiGe layer to form a condensed SiGe layer, wherein the first condensation is performed at an elevated temperature; etching the condensed SiGe layer and a top portion of the bulk silicon substrate to form a recess and a composite fin in the recess, wherein the composite fin comprises a silicon fin and a condensed SiGe fin over the silicon fin; filling a first dielectric material into the recess; etching the first dielectric material until the condensed SiGe fin is exposed; forming a mask to cover a top surface and sidewalls of the condensed SiGe fin; recessing the first dielectric material to expose sidewalls of a portion of the silicon fin; oxidizing the portion of the silicon fin to form an insulator; filling a second dielectric material on the first dielectric material, wherein a top surface of the second dielectric material is substantially level with a top surface of the insulator; and performing a second condensation to the condensed SiGe fin to form a substantially pure germanium fin. - View Dependent Claims (12, 13, 14, 15, 16, 17)
-
Specification