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Method for self-aligning a stop layer to a replacement gate for self-aligned contact integration

  • US 8,048,790 B2
  • Filed: 09/17/2009
  • Issued: 11/01/2011
  • Est. Priority Date: 09/17/2009
  • Status: Active Grant
First Claim
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1. A method comprising:

  • forming a removable gate electrode over a substrate;

    forming a self aligned contact (SAC) stop layer over the removable gate electrode and the substrate;

    removing a portion of the SAC stop layer over the removable gate electrode;

    removing the removable gate electrode leaving an opening;

    forming a replacement gate electrode, comprising a metal, in the opening;

    transforming an upper portion of the metal into a dielectric layer; and

    forming an SAC.

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