Methods to avoid unstable plasma states during a process transition
First Claim
1. A method of etching in a plasma processing chamber comprising:
- conducting a process transition from one process step to another process step, wherein the process transition comprises changing of at least one process parameter; and
performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition.
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Abstract
In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.
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Citations
13 Claims
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1. A method of etching in a plasma processing chamber comprising:
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conducting a process transition from one process step to another process step, wherein the process transition comprises changing of at least one process parameter; and performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification