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Methods to avoid unstable plasma states during a process transition

  • US 8,048,806 B2
  • Filed: 03/10/2006
  • Issued: 11/01/2011
  • Est. Priority Date: 03/17/2000
  • Status: Expired due to Fees
First Claim
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1. A method of etching in a plasma processing chamber comprising:

  • conducting a process transition from one process step to another process step, wherein the process transition comprises changing of at least one process parameter; and

    performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition.

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