Flat panel display device with polycrystalline silicon thin film transistor

• US 8,049,220 B2
• Filed: 11/19/2007
• Issued: 11/01/2011
• Est. Priority Date: 06/05/2003
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Mobile Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Lee, Ul-Ho, Lee, Ki-Yong, Park, Ji-Yong, Koo, Jae-Bon, Park, Hye-Hyang
• Primary Examiner(s): Parker; Kenneth
• Assistant Examiner(s): Ho; Anthony
• Application Number:
  US11/942,460
• Publication Number:
  US 20080067514A1
• Time in Patent Office: 1,443 Days
• Field of Search: 257/59, 257/72, 349/43
• US Class Current: 257/72
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1296 adapted to increase the uniformity of device parameters
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

The present invention relates to a flat panel display device comprising a polycrystalline silicon thin film transistor and provides a flat panel display device having improved characteristics by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a driving circuit portion and active channel regions of pixel portion. This may be achieved by having a different number of grain boundaries included in the polycrystalline silicon thin film formed in active channel regions of a switching thin film transistor and a driving thin film transistor formed in the pixel portion, and by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a thin film transistor for driving the pixel portion for each red, green and blue of the pixel portion. Further, this may be achieved by having a different number of grain boundaries included in polycrystalline silicon formed in active channel regions of an NMOS thin film transistor and a PMOS thin film transistor for forming CMOS transistor used in flat panel display device, thereby constructing a thin film transistor to obtain the improved characteristics for each transistor.

Claims

1. A flat panel display device comprising green, red, and blue pixel regions, and a driving thin film transistor for driving each pixel having the same length and width of active channels, wherein a number of grain boundaries of polycrystalline silicon included in active channel regions of the driving thin film transistor is different from each other in at least two pixels,

wherein the green pixel region has a largest number of primary grain boundaries of polycrystalline silicon, and the red pixel region and the blue pixel region have the same number of primary grain boundaries of polycrystalline silicon.

2. A flat panel display device comprising green, red, and blue pixel regions, and a driving thin film transistor for driving each pixel having the same length and width of active channels, wherein a number of grain boundaries of polycrystalline silicon included in active channel regions of the driving thin film transistor is different from each other in at least two pixels,

wherein a number of primary grain boundaries of polycrystalline silicon is increased in the order of green, blue and red pixel regions.

3. A flat panel display device comprising green, red, and blue pixel regions, and a driving thin film transistor for driving each pixel having the same length and width of active channels, wherein a number of grain boundaries of polycrystalline silicon included in active channel regions of the driving thin film transistor is different from each other in at least two pixels,

wherein the green pixel region and the blue pixel region have the same number of primary grain boundaries of polycrystalline silicon, and the red pixel region has a smallest number of primary grain boundaries of polycrystalline silicon.

4. A flat panel display device comprising green, red, and blue pixel regions, and a driving thin film transistor for driving each pixel having the same length and width of active channels, wherein a number of grain boundaries of polycrystalline silicon included in active channel regions of the driving thin film transistor is different from each other in at least two pixels,

wherein the grain boundaries are perpendicular to current flowing direction in active channel regions of each driving thin film transistor,

wherein the grain boundaries are side grain boundaries of anisotropic grains, and

wherein the flat panel display device has a smallest number of primary grain boundaries included in active channel regions of driving thin film transistor of the green pixel region.

5. A flat panel display device comprising green, red, and blue pixel regions, and a driving thin film transistor for driving each pixel having the same length and width of active channels, wherein a number of grain boundaries of polycrystalline silicon included in active channel regions of the driving thin film transistor is different from each other in at least two pixels,

wherein the grain boundaries are perpendicular to current flowing direction in active channel regions of each driving thin film transistor,

wherein the grain boundaries are side grain boundaries of anisotropic grains,

wherein the flat panel display device has a smallest number of primary grain boundaries included in active channel regions of driving thin film transistor of the green pixel region, and

wherein a number of primary grain boundaries included in active channel regions of driving thin film transistor of the blue pixel region is the same as or less than a number of primary grain boundaries included in active channel regions of driving thin film transistor of the red pixel region.