Light emitting devices with improved light extraction efficiency
First Claim
Patent Images
1. A structure comprising:
- a light emitting device die comprising an active region disposed between a semiconductor layer of n-type conductivity and a semiconductor layer of p-type conductivity;
an optical element comprising a transparent material and a luminescent material bonded to the light emitting device die; and
a bonding material disposed between the light emitting device die and the optical element;
wherein the bonding material directly bonds, and does not encapsulate, the optical element to a single surface of the light emitting device die.
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Abstract
Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.
67 Citations
39 Claims
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1. A structure comprising:
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a light emitting device die comprising an active region disposed between a semiconductor layer of n-type conductivity and a semiconductor layer of p-type conductivity; an optical element comprising a transparent material and a luminescent material bonded to the light emitting device die; and a bonding material disposed between the light emitting device die and the optical element;
wherein the bonding material directly bonds, and does not encapsulate, the optical element to a single surface of the light emitting device die. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A structure comprising:
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a light emitting device die comprising an active region disposed between a semiconductor layer of n-type conductivity and a semiconductor layer of p-type conductivity; a luminescent element bonded to the light emitting device die; a bonding material disposed between a single surface of the light emitting device die and the luminescent element; and an optical element coupled to the luminescent element so that the luminescent element is between the optical element and the bonding material, wherein the optical element is one of a lens and an optical concentrator, and wherein the bonding material directly bonds, and does not encapsulate, the luminescent element to the light emitting device die. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A structure comprising:
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a light emitting device die comprising an active region disposed between a semiconductor layer of n-type conductivity and a semiconductor layer of p-type conductivity; a luminescent element bonded to the light emitting device die, wherein the luminescent element is one of a lens and an optical concentrator; and a bonding material disposed between the light emitting device die and the luminescent element;
wherein the bonding material directly bonds, and does not encapsulate, the luminescent element to a single surface of the light emitting device die. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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Specification