Power semiconductor device having a voltage sustaining layer with a terraced trench formation of floating islands
First Claim
1. A power semiconductor device comprising:
- a substrate of a second conductivity type;
a voltage sustaining region disposed on said substrate, said voltage sustaining region including;
an epitaxial layer having a first conductivity type;
at least one terraced trench located in said epitaxial layer, said terraced trench having a plurality of sidewalls, and a plurality of portions that differ in width to define at least one annular ledge therebetween;
at least one annular doped region having a dopant of a second conductivity type, said annular doped region being located in said epitaxial layer below and adjacent to said annular ledge, wherein said plurality of sidewalls do not have dopant implanted therein;
a filler material substantially filling said terraced trench; and
at least one active region of said second conductivity disposed over said voltage sustaining region to define a junction therebetween.
0 Assignments
0 Petitions
Accused Products
Abstract
A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a second conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one terraced trench in the epitaxial layer. The terraced trench has a plurality of portions that differ in width to define at least one annular ledge therebetween. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material lining the annular ledge and said trench bottom and into adjacent portions of the epitaxial layer. The dopant is diffused to form at least one annular doped region in the epitaxial layer and at least one other region located below the annular doped region. A filler material is deposited in the terraced trench to substantially fill the trench, thus completing the voltage sustaining region. At least one region of the second conductivity type is formed over the voltage sustaining region to define a junction therebetween.
-
Citations
16 Claims
-
1. A power semiconductor device comprising:
-
a substrate of a second conductivity type; a voltage sustaining region disposed on said substrate, said voltage sustaining region including; an epitaxial layer having a first conductivity type; at least one terraced trench located in said epitaxial layer, said terraced trench having a plurality of sidewalls, and a plurality of portions that differ in width to define at least one annular ledge therebetween; at least one annular doped region having a dopant of a second conductivity type, said annular doped region being located in said epitaxial layer below and adjacent to said annular ledge, wherein said plurality of sidewalls do not have dopant implanted therein; a filler material substantially filling said terraced trench; and at least one active region of said second conductivity disposed over said voltage sustaining region to define a junction therebetween. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A power semiconductor device made in accordance with the method comprising the steps of:
-
A. providing a substrate of a second conductivity type; B. forming a voltage sustaining region on said substrate by; 1. depositing an epitaxial layer on the substrate, said epitaxial layer having a first conductivity type; 2. forming at least one terraced trench in said epitaxial layer, said terraced trench having a plurality of portions that differ in width to define at least one annular ledge therebetween; 3. depositing a barrier material along the walls and bottom of said trench; 4. implanting a dopant of a second conductivity type through the barrier material lining said at least one annular ledge and said trench bottom and into adjacent portions of the epitaxial layer, wherein dopant is not implanted into the walls of said trench; 5. diffusing said dopant to form at least one annular doped region in said epitaxial layer and at least one other region located below said annular doped region in said epitaxial layer; 6. depositing a filler material in said terraced trench to substantially fill said terraced trench; and C. forming over said voltage sustaining region at least one region of said second conductivity type to define a junction therebetween, wherein step (C) further includes the steps of; forming an insulated gate electrode comprising oxide and polysilicon layers; forming first and second body regions in the epitaxial layer to define a drift region therebetween, said body regions having a second conductivity type; and forming first and second source regions of the first conductivity type in the first and second body regions, respectively, wherein said body regions include regions that extend deeper than a depth of said first and second source regions. - View Dependent Claims (15, 16)
-
Specification