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Device for avoiding parasitic capacitance in an integrated circuit package

DC CAFC
  • US 8,049,340 B2
  • Filed: 03/22/2006
  • Issued: 11/01/2011
  • Est. Priority Date: 03/22/2006
  • Status: Active Grant
First Claim
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1. An integrated circuit package substrate comprising:

  • a first and a second electrically conductive layer separated from each other by an electrically insulating layer with no intermediate conductive layer therebetween;

    a plurality of rows of contact pads formed in the first electrically conductive layer for making a direct connection between the integrated circuit package substrate and a printed circuit board; and

    a plurality of cutouts formed in the second electrically conductive layer for reducing parasitic capacitance between the second electrically conductive layer and the first electrically conductive layer, wherein each cutout encloses an electrically insulating area within the second electrically conductive layer, and wherein each electrically insulating area completely overlaps a corresponding one of the contact pads formed in the first electrically conductive layer such that there is substantially no overlap of the rows of contact pads with metal in the second electrically conductive layer.

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