Semiconductor device comprising circuit between first and second conducting wires

• US 8,049,669 B2
• Filed: 03/24/2005
• Issued: 11/01/2011
• Est. Priority Date: 03/26/2004
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Akiba, Mai, Yamazaki, Shunpei
• Primary Examiner(s): Le; Hoanganh
• Application Number:
  US10/592,780
• Publication Number:
  US 20070176845A1
• Time in Patent Office: 2,413 Days
• Field of Search: 343/895, 343/702, 343/700.MS
• US Class Current: 343/700.MS
• CPC Class Codes: G06K 19/07728 the record carrier comprising means for protection against impact or bending, e.g. protective shells or stress-absorbing layers around the integrated circuit
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/07779 the inductive antenna being a coil
• CPC Class Codes: G06K 19/07783 the coil being planar
• CPC Class Codes: G06K 19/07784 the inductive antenna consisting of a plurality of coils stacked on top of one another
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components

Abstract

It is an object of the present invention to provide an ID chip in which gain of an antenna is increased and the mechanical strength of an integrated circuit can be enhanced without suppressing a circuit scale. A semiconductor device typified by an ID chip of the present invention includes an integrated circuit using a semiconductor element formed from a thin semiconductor film and an antenna connected to the integrated circuit. The antenna and the integrated circuit are formed on a substrate, and a conducting wire or a conductive film included in the antenna is divided into two layers and formed so as to sandwich the substrate provided with the integrated circuit.

Claims

1. A semiconductor device comprising:

an antenna including a first conducting wire and a second conducting wire; and

a circuit including a transistor;

wherein one of a source region and a drain region of the transistor is electrically connected to the first conducting wire,

wherein the circuit is provided between the first conducting wire and the second conducting wire, and

wherein the first conducting wire, the second conducting wire and the integrated circuit are covered with a resin.

8. The semiconductor device according to any one of claims 1 though 7,

wherein the circuit includes a rectification circuit, a demodulation circuit, and a modulation circuit.

2. A semiconductor device comprising:

an antenna including a first conducting wire and a second conducting wire; and

a circuit including at least one interlayer insulating film over a substrate;

wherein the substrate is provided between the first conducting wire and the second conducting wire, and

wherein the first conducting wire and the second conducting wire are connected in a contact hole formed in the substrate and layers including the interlayer insulating film.

3. The semiconductor device according to claim 2,

wherein the substrate is a flexible substrate.

4. A semiconductor device comprising:

an antenna including a first conductive film and a second conductive film; and

a circuit including a transistor,

wherein one of a source region and a drain region of the transistor is electrically connected to the first conductive film,

wherein the circuit is provided between the first conductive film and the second conductive film, and

wherein the first conductive film, the second conductive film and the integrated circuit are covered with a resin.

5. A semiconductor device comprising:

an antenna including a first conductive film and a second conductive film; and

a circuit including at least one interlayer insulating film over a substrate,

wherein the substrate is provided between the first conductive film and the second conductive film, and

wherein the first conductive film and the second conductive film are connected in a contact hole formed in the substrate and layers including the interlayer insulating film.

6. The semiconductor device according to claim 5,

wherein the substrate is a flexible substrate.

7. A semiconductor device comprising:

a circuit having a thin film transistor;

an insulating film over the circuit;

a first conducting wire functioning as a first antenna electrically connecting to the circuit through a contact hole in the insulating film;

a second conducting wire functioning as a second antenna, and

wherein the first conducting wire, the second conducting wire and the integrated circuit are covered with a resin.

9. The semiconductor device according to claim 7,

wherein the first conducting wire and the second conducting wire are electrically connected.

10. The semiconductor device according to claim 7,

wherein the first conducting wire and the second conducting wire are electrically isolated from each other.

11. The semiconductor device according to claim 7,

wherein the first antenna is configured to transmit and receive signals, and

wherein the second antenna is configured to apply power to the circuit.

12. The semiconductor device according to claim 7,

wherein the first antenna is configured to transmit signals, and

wherein the second antenna is configured to receive the signals and to apply power to the circuit.

13. A semiconductor device comprising:

a first antenna including a first conducting wire;

a second antenna including a second conducting wire; and

a circuit including a transistor,

wherein one of a source region and a drain region of the transistor is electrically connected to the first conducting wire,

wherein the circuit is provided between the first conducting wire and the second conducting wire, and

wherein the first antenna, the second antenna and the circuit are covered with a resin.

14. The semiconductor device according to claim 13,

wherein the first antenna is configured to transmit and receive signals, and

wherein the second antenna is configured to apply power to the circuit.

15. The semiconductor device according to claim 13,

wherein the first antenna is configured to transmit signals, and

wherein the second antenna is configured to receive the signals and to apply power to the circuit.

24. The semiconductor device according to any one of claims 13 though 23,

wherein the circuit includes a rectification circuit, a demodulation circuit, and a modulation circuit,

wherein the first antenna is connected to the rectification circuit and the demodulation circuit, and

wherein the second antenna is connected to the modulation circuit.

25. The semiconductor device according to any one of claims 13 though 23,

wherein the circuit includes a rectification circuit, a demodulation circuit, and a modulation circuit,

wherein the first antenna is connected to the rectification circuit, and

wherein the second antenna is connected to the modulation circuit and the demodulation circuit.

16. A semiconductor device comprising:

a first antenna including a first conducting wire;

a second antenna including a second conducting wire; and

a circuit over a substrate,

wherein the substrate and the circuit are provided between the first conducting wire and the second conducting wire,

wherein the first conducting wire and the second conducting wire are electrically isolated from each other,

wherein the first conducting wire is connected to the circuit,

wherein the second conducting wire is connected to the circuit in a contact hole formed in the substrate, and

wherein the first antenna, the second antenna and the circuit are covered with a resin.

17. The semiconductor device according to claim 16,

wherein the substrate is a flexible substrate.

18. The semiconductor device according to claim 16,

wherein the first antenna is configured to transmit and receive signals, and

wherein the second antenna is configured to apply power to the circuit.

19. The semiconductor device according to claim 16,

wherein the first antenna is configured to transmit signals, and

wherein the second antenna is configured to receive the signals and to apply power to the circuit.

20. A semiconductor device comprising:

a first antenna including a first conductive film;

a second antenna including a second conductive film; and

a circuit including a transistor;

wherein one of a source region and a drain region of the transistor is electrically connected to the first conductive film,

wherein the circuit is provided between the first conductive film and the second conductive film, and

wherein the first antenna, the second antenna and the circuit are covered with a resin.

21. The semiconductor device according to claim 20,

wherein the first antenna is configured to transmit and receive signals, and

wherein the second antenna is configured to apply power to the circuit.

22. The semiconductor device according to claim 20,

wherein the first antenna is configured to transmit signals, and

wherein the second antenna is configured to receive the signals and to apply power to the circuit.

23. A semiconductor device comprising:

a first antenna including a first conductive film;

a second antenna including a second conductive film; and

a circuit over a substrate,

wherein the substrate and the circuit are provided between the first conductive film and the second conductive film,

wherein the first conductive film and the second conductive film are electrically isolated from each other,

wherein the first conductive film is connected to the circuit,

wherein the second conductive film is connected to the circuit in a contact hole formed in the substrate, and

wherein the first antenna, the second antenna and the circuit are covered with a resin.

26. A semiconductor device comprising:

an antenna including a first conducting wire and a second conducting wire; and

a circuit having a transistor including at least one interlayer insulating film over a substrate;

wherein the substrate is provided between the first conducting wire and the second conducting wire, and

wherein the first conducting wire and the second conducting wire are connected in a contact hole formed in the substrate and layers including the interlayer insulating film.

27. The semiconductor device according to claim 26,

wherein the substrate is a flexible substrate.

39. The semiconductor device according to any one of claims 26 though 38,

wherein the circuit includes a rectification circuit, a demodulation circuit, and a modulation circuit.

28. A semiconductor device comprising:

an antenna including a first conductive film and a second conductive film; and

a circuit having a transistor including at least one interlayer insulating film over a substrate,

wherein the substrate is provided between the first conductive film and the second conductive film, and

wherein the first conductive film and the second conductive film are connected in a contact hole formed in the substrate and layers including the interlayer insulating film.

29. The semiconductor device according to claim 28,

wherein the substrate is a flexible substrate.

30. A semiconductor device comprising:

a circuit having a thin film transistor including at least one interlayer insulating film over a front surface of a substrate;

an insulating film over the circuit;

a first conducting wire electrically connecting to the circuit through a first contact hole in the insulating film;

a second conducting wire functioning as an antenna over a rear surface of the substrate,

wherein the first conducting wire and the second conducting wire are connected in a second contact hole formed in the substrate and layers including the interlayer insulating film.

31. The semiconductor device according to claim 30,

wherein the substrate is a flexible substrate.

32. The semiconductor device according to claim 30,

wherein the first conducting wire is configured to function as a first antenna for signal transmission and signal reception, and

wherein the second conducting wire is configured to function as a second antenna for apply power to the circuit.

33. The semiconductor device according to claim 30,

wherein the first conducting wire is configured to function as a first antenna for signal transmission, and

wherein the second conducting wire is configured to function as a second antenna for signal reception and for apply power to the circuit.

34. A semiconductor device comprising:

a first conducting wire;

a second conducting wire; and

a circuit including at least one interlayer insulating film over a substrate,

wherein the substrate is provided between the first conducting wire and the second conducting wire, and

wherein the first conducting wire and the second conducting wire are connected in a contact hole formed in the substrate and layers including the interlayer insulating film.

35. The semiconductor device according to claim 34,

wherein the substrate is a flexible substrate.

36. The semiconductor device according to claim 34,

wherein the first conducting wire is configured to function as a first antenna for signal transmission and signal reception, and

wherein the second conducting wire is configured to function as a second antenna for apply power to the circuit.

37. The semiconductor device according to claim 34,

wherein the first conducting wire is configured to function as a first antenna for signal transmission, and

wherein the second conducting wire is configured to function as a second antenna for signal reception and for applying power to the circuit.

38. A semiconductor device comprising:

a first conductive film;

a second conductive film; and

a circuit including at least one interlayer insulating film over a substrate;

wherein the substrate is provided between the first conductive film and the second conductive film, and

wherein the first conductive film and the second conductive film are connected in a contact hole formed in the substrate and layers including the interlayer insulating film.

40. The semiconductor device according to claim 38,

wherein the substrate is a flexible substrate.

41. The semiconductor device according to claim 38,

wherein the first conductive film is configured to function as a first antenna for signal transmission and signal reception, and

wherein the second conductive film is configured to function as a second antenna for applying power to the circuit.

42. The semiconductor device according to claim 38,

wherein the first conductive film is configured to function as a first antenna for signal transmission, and

wherein the second conductive film is configured to function as a second antenna for signal reception and for applying power to the circuit.