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Compensating non-volatile storage using different pass voltages during program-verify and read

  • US 8,051,240 B2
  • Filed: 05/09/2008
  • Issued: 11/01/2011
  • Est. Priority Date: 05/09/2008
  • Status: Active Grant
First Claim
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1. A method for operating non-volatile storage, comprising:

  • programming at least one selected storage element in a set of storage elements, including performing a verify operation which involves applying a verify voltage to a control gate of the at least one selected storage element while applying a first pass voltage to respective control gates of unselected storage elements which are connected in series with the at least one selected storage element and which are in an unprogrammed or only partly programmed state;

    programming the unselected storage elements; and

    reading the at least one selected storage element, including applying a read compare voltage to the control gate of the at least one selected storage element while applying a second pass voltage, lower than the first pass voltage, to the unselected storage elements, the at least one selected storage element and the unselected storage elements are provided in a NAND string.

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